Role of interfacial nitrogen in improving thin silicon oxides grown in N2O
We have used chemical depth profiling, with a depth resolution of 10 Å, in conjunction with x-ray photoelectron spectroscopy to study the composition and chemical bonding in thin silicon oxides grown in N2O with both a conventional furnace and a rapid thermal annealer (RTA) process. The nitrogen pro...
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| Veröffentlicht in: | Applied physics letters 1993-07, Vol.63 (1), p.54-56 |
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| container_title | Applied physics letters |
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| creator | CARR, E. C BUHRMAN, R. A |
| description | We have used chemical depth profiling, with a depth resolution of 10 Å, in conjunction with x-ray photoelectron spectroscopy to study the composition and chemical bonding in thin silicon oxides grown in N2O with both a conventional furnace and a rapid thermal annealer (RTA) process. The nitrogen profiles of RTA and furnace oxides differ, with the RTA oxides showing an increase in nitrogen concentration at the interface and the furnace oxides showing a more uniform nitrogen distribution. The percentage of nitrogen at the interface also differs, and correlates with a reduction in interface state generation under current injection for increased nitrogen concentration. The chemical environment for the nitrogen changes with distance from the interface, and this is attributed to an increasing number of nitrogen—silicon bonds near the interface. |
| doi_str_mv | 10.1063/1.109749 |
| format | Article |
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The chemical environment for the nitrogen changes with distance from the interface, and this is attributed to an increasing number of nitrogen—silicon bonds near the interface.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLxDAUhYMoOI6CPyELF26q9-bZLGXwyeCA6Lpk0mSMdJqSFB__3uqIq8M5fJzFR8gpwgWC4pc4hdHC7JEZgtYVR6z3yQwAeKWMxENyVMrbVCXjfEYenlLnaQo09qPPwbpoO9rHMaeN76eRxu2Q03vsN3R8nWqJXXSpp-kztr7QTU4fv9gjWx2Tg2C74k_-ck5ebq6fF3fVcnV7v7haVo4zNlbcgEbrlBWiDQiCSyF4uw7GM9mikQoD1EoKLZzyoK1YQwsMjWqDZ1xyPifnu1-XUynZh2bIcWvzV4PQ_DhosNk5mNCzHTrY4mwXsu1dLP-8qLXUteLfNOdZcQ</recordid><startdate>19930705</startdate><enddate>19930705</enddate><creator>CARR, E. 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A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CARR, E. C</au><au>BUHRMAN, R. A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of interfacial nitrogen in improving thin silicon oxides grown in N2O</atitle><jtitle>Applied physics letters</jtitle><date>1993-07-05</date><risdate>1993</risdate><volume>63</volume><issue>1</issue><spage>54</spage><epage>56</epage><pages>54-56</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We have used chemical depth profiling, with a depth resolution of 10 Å, in conjunction with x-ray photoelectron spectroscopy to study the composition and chemical bonding in thin silicon oxides grown in N2O with both a conventional furnace and a rapid thermal annealer (RTA) process. The nitrogen profiles of RTA and furnace oxides differ, with the RTA oxides showing an increase in nitrogen concentration at the interface and the furnace oxides showing a more uniform nitrogen distribution. The percentage of nitrogen at the interface also differs, and correlates with a reduction in interface state generation under current injection for increased nitrogen concentration. The chemical environment for the nitrogen changes with distance from the interface, and this is attributed to an increasing number of nitrogen—silicon bonds near the interface.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.109749</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Applied physics letters, 1993-07, Vol.63 (1), p.54-56 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_109749 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Role of interfacial nitrogen in improving thin silicon oxides grown in N2O |
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