Hetero-nipi band filling modulator with laterally interdigital contacts made by shadow mask molecular beam epitaxy regrowth

An AlGaAs/GaAs optical hetero-nipi modulator based on band filling effect with interdigital selective contacts has been fabricated by use of shadow mask molecular beam epitaxy (MBE) regrowth technique. There is a five order of magnitude change in I-V characteristics from forward to reverse junction...

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Veröffentlicht in:	Applied physics letters 1993-01, Vol.62 (2), p.152-153
Hauptverfasser:	WU, X, GULDEN, K. H, THOMAS, M, SMITH, J. S, WHINNERY, J. R, MALZER, S, KIESEL, P, KNEISSL, M, DÖHLER, G. H
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Miscellaneous Optical and optoelectronic circuits
Online-Zugang:	Volltext
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