Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient
The topographical evolution of the (100) GaAs surface annealed under an arsine/hydrogen ambient is studied by in situ orientation-resolved light scattering and ex situ atomic force microscopy (AFM). The light scattering system provides real-time monitoring of the magnitude and crystal orientation of...
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| Veröffentlicht in: | Applied physics letters 1993-01, Vol.62 (2), p.143-145 |
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| container_title | Applied physics letters |
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| creator | EPLER, J. E JUNG, T. A SCHWEIZER, H. P |
| description | The topographical evolution of the (100) GaAs surface annealed under an arsine/hydrogen ambient is studied by in situ orientation-resolved light scattering and ex situ atomic force microscopy (AFM). The light scattering system provides real-time monitoring of the magnitude and crystal orientation of topographical features of 0.3 μm scale. The AFM images of the GaAs surface, quenched at various annealing temperatures, vividly depict the randomly oriented high density monolayer steps evolving into an atomically smooth terracelike structure. |
| doi_str_mv | 10.1063/1.109352 |
| format | Article |
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A</au><au>SCHWEIZER, H. P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient</atitle><jtitle>Applied physics letters</jtitle><date>1993-01-11</date><risdate>1993</risdate><volume>62</volume><issue>2</issue><spage>143</spage><epage>145</epage><pages>143-145</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The topographical evolution of the (100) GaAs surface annealed under an arsine/hydrogen ambient is studied by in situ orientation-resolved light scattering and ex situ atomic force microscopy (AFM). The light scattering system provides real-time monitoring of the magnitude and crystal orientation of topographical features of 0.3 μm scale. The AFM images of the GaAs surface, quenched at various annealing temperatures, vividly depict the randomly oriented high density monolayer steps evolving into an atomically smooth terracelike structure.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.109352</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1993-01, Vol.62 (2), p.143-145 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_109352 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient |
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