Extremely high quantum efficiency (86%) operation of AlGaInP visible laser diode with lateral leaky waveguide structure

Extremely high quantum efficiency (86%) operation of AlGaInP visible laser diode with lateral leaky waveguide structure

AlGaInP visible laser diode with lateral leaky waveguide structure has been demonstrated for the first time. The laser has differential quantum efficiency as high as 43% from one facet without coating in addition to stable fundamental transverse-mode oscillation. The high differential quantum effici...

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Veröffentlicht in:Applied physics letters 1993-05, Vol.62 (21), p.2602-2604
Hauptverfasser: KIDOGUCHI, I, KAMIYAMA, S, MANNOH, M, BAN, Y, OHNAKA, K
Format: Artikel
Sprache:eng
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Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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container_end_page 2604
container_issue 21
container_start_page 2602
container_title Applied physics letters
container_volume 62
creator KIDOGUCHI, I
KAMIYAMA, S
MANNOH, M
BAN, Y
OHNAKA, K
description AlGaInP visible laser diode with lateral leaky waveguide structure has been demonstrated for the first time. The laser has differential quantum efficiency as high as 43% from one facet without coating in addition to stable fundamental transverse-mode oscillation. The high differential quantum efficiency is due to the propagation loss as low as 4.2 cm−1 of this laser, which is the lowest value for AlGaInP visible diode to the best of our knowledge. This laser can be successfully fabricated by selective growth of AlGaInP quarternary alloy.
doi_str_mv 10.1063/1.109306
format Article
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subjects Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
title Extremely high quantum efficiency (86%) operation of AlGaInP visible laser diode with lateral leaky waveguide structure
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