Observation of staggered band lineup in In0.5Ga0.5P/Al0.43Ga0.57As heterojunction grown by liquid phase epitaxy

The conduction band discontinuity for n-N isotype In0.5Ga0.5P/Al0.43Ga0.57As heterostructure grown on (100) GaAs substrate by liquid phase epitaxy was measured by the capacitance-voltage profiling method. The composition of each ternary was determined by photoluminescence and double-crystal x-ray di...

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Veröffentlicht in:	Applied physics letters 1993-05, Vol.62 (21), p.2688-2690
Hauptverfasser:	Lee, Jong Boong, Kim, Kwan-Shik, Choe, Byung-Doo
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states
Online-Zugang:	Volltext
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