Observation of staggered band lineup in In0.5Ga0.5P/Al0.43Ga0.57As heterojunction grown by liquid phase epitaxy

The conduction band discontinuity for n-N isotype In0.5Ga0.5P/Al0.43Ga0.57As heterostructure grown on (100) GaAs substrate by liquid phase epitaxy was measured by the capacitance-voltage profiling method. The composition of each ternary was determined by photoluminescence and double-crystal x-ray di...

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Veröffentlicht in:	Applied physics letters 1993-05, Vol.62 (21), p.2688-2690
Hauptverfasser:	Lee, Jong Boong, Kim, Kwan-Shik, Choe, Byung-Doo
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states
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Zusammenfassung:	The conduction band discontinuity for n-N isotype In0.5Ga0.5P/Al0.43Ga0.57As heterostructure grown on (100) GaAs substrate by liquid phase epitaxy was measured by the capacitance-voltage profiling method. The composition of each ternary was determined by photoluminescence and double-crystal x-ray diffraction measurement. The measurement of conduction band discontinuity shows staggered band lineup with both bands of In0.5Ga0.5P above those of Al0.43Ga0.57As, and the calculated conduction-band discontinuity ΔEc and the fixed interface charge density σi are 157 meV and −3×1010 cm−2, respectively. The nonoptimized fabrication of the light emitting devices with AlGaAs/InGaP/AlGaAs double heterostructure can be explained by the staggered band lineup of In0.5Ga0.5P/AlxGa1−xAs heterointerface for x(AlAs)≳0.43.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.109258