Effects of mixing germane in silane gas-source molecular beam epitaxy
Growth of SiGe gas-source molecular beam epitaxy (GSMBE) using silane/germane mixture has been investigated for the germane content of 0%, 0.8%, and 2.6%. From detailed measurements on the growth rate, a separation into high- and low-temperature regions of the growth rate, as in silane-GSMBE system,...
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| Veröffentlicht in: | Applied physics letters 1993-06, Vol.62 (26), p.3461-3463 |
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| container_issue | 26 |
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| container_title | Applied physics letters |
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| creator | KI-JOON KIM SUEMITSU, M YAMANAKA, M MIYAMOTO, N |
| description | Growth of SiGe gas-source molecular beam epitaxy (GSMBE) using silane/germane mixture has been investigated for the germane content of 0%, 0.8%, and 2.6%. From detailed measurements on the growth rate, a separation into high- and low-temperature regions of the growth rate, as in silane-GSMBE system, has been found to exist in this silane/germane system. A simultaneous measurement on the surface hydrogen coverage has revealed that the growth in the low-temperature region is rate limited by the surface hydrogen desorption process, reasoning the enhanced growth rate with germane in terms of the reduced coverage of the surface hydrogen. All the growth rates followed a same fourth power dependence on the free-adsorption site, which suggests a validity of the four-site adsorption model, established for silane-GSMBE, in silane/germane GSMBE. |
| doi_str_mv | 10.1063/1.109049 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_109049</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4868226</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-7090f5e51e5e2027d60f49af33ffc7c835cb6e78844618ef8509d4013ca7e6433</originalsourceid><addsrcrecordid>eNo9j0tLAzEUhYMoWKvgT8jChZvRm7l5zVJKfUDBja6HNL0ZIvMoyRTaf--UEVfnHPg4nMPYvYAnARqfxSQVyOqCLQQYU6AQ9pItAAALXSlxzW5y_pmiKhEXbL0OgfyY-RB4F4-xb3hDqXM98djzHNuza1wu8nBInng3tOQPrUt8S67jtI-jO55u2VVwbaa7P12y79f11-q92Hy-faxeNoXHEsbCTMuCIiVIUQml2WkIsnIBMQRvvEXlt5qMtVJqYSlYBdVOgkDvDGmJuGSPc69PQ86JQr1PsXPpVAuoz_drUc_3J_RhRvcue9eG5Hof8z8vrbZlqfEXbm9YOQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effects of mixing germane in silane gas-source molecular beam epitaxy</title><source>AIP Digital Archive</source><creator>KI-JOON KIM ; SUEMITSU, M ; YAMANAKA, M ; MIYAMOTO, N</creator><creatorcontrib>KI-JOON KIM ; SUEMITSU, M ; YAMANAKA, M ; MIYAMOTO, N</creatorcontrib><description>Growth of SiGe gas-source molecular beam epitaxy (GSMBE) using silane/germane mixture has been investigated for the germane content of 0%, 0.8%, and 2.6%. From detailed measurements on the growth rate, a separation into high- and low-temperature regions of the growth rate, as in silane-GSMBE system, has been found to exist in this silane/germane system. A simultaneous measurement on the surface hydrogen coverage has revealed that the growth in the low-temperature region is rate limited by the surface hydrogen desorption process, reasoning the enhanced growth rate with germane in terms of the reduced coverage of the surface hydrogen. All the growth rates followed a same fourth power dependence on the free-adsorption site, which suggests a validity of the four-site adsorption model, established for silane-GSMBE, in silane/germane GSMBE.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.109049</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Applied physics letters, 1993-06, Vol.62 (26), p.3461-3463</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-7090f5e51e5e2027d60f49af33ffc7c835cb6e78844618ef8509d4013ca7e6433</citedby><cites>FETCH-LOGICAL-c320t-7090f5e51e5e2027d60f49af33ffc7c835cb6e78844618ef8509d4013ca7e6433</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4868226$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KI-JOON KIM</creatorcontrib><creatorcontrib>SUEMITSU, M</creatorcontrib><creatorcontrib>YAMANAKA, M</creatorcontrib><creatorcontrib>MIYAMOTO, N</creatorcontrib><title>Effects of mixing germane in silane gas-source molecular beam epitaxy</title><title>Applied physics letters</title><description>Growth of SiGe gas-source molecular beam epitaxy (GSMBE) using silane/germane mixture has been investigated for the germane content of 0%, 0.8%, and 2.6%. From detailed measurements on the growth rate, a separation into high- and low-temperature regions of the growth rate, as in silane-GSMBE system, has been found to exist in this silane/germane system. A simultaneous measurement on the surface hydrogen coverage has revealed that the growth in the low-temperature region is rate limited by the surface hydrogen desorption process, reasoning the enhanced growth rate with germane in terms of the reduced coverage of the surface hydrogen. All the growth rates followed a same fourth power dependence on the free-adsorption site, which suggests a validity of the four-site adsorption model, established for silane-GSMBE, in silane/germane GSMBE.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9j0tLAzEUhYMoWKvgT8jChZvRm7l5zVJKfUDBja6HNL0ZIvMoyRTaf--UEVfnHPg4nMPYvYAnARqfxSQVyOqCLQQYU6AQ9pItAAALXSlxzW5y_pmiKhEXbL0OgfyY-RB4F4-xb3hDqXM98djzHNuza1wu8nBInng3tOQPrUt8S67jtI-jO55u2VVwbaa7P12y79f11-q92Hy-faxeNoXHEsbCTMuCIiVIUQml2WkIsnIBMQRvvEXlt5qMtVJqYSlYBdVOgkDvDGmJuGSPc69PQ86JQr1PsXPpVAuoz_drUc_3J_RhRvcue9eG5Hof8z8vrbZlqfEXbm9YOQ</recordid><startdate>19930628</startdate><enddate>19930628</enddate><creator>KI-JOON KIM</creator><creator>SUEMITSU, M</creator><creator>YAMANAKA, M</creator><creator>MIYAMOTO, N</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930628</creationdate><title>Effects of mixing germane in silane gas-source molecular beam epitaxy</title><author>KI-JOON KIM ; SUEMITSU, M ; YAMANAKA, M ; MIYAMOTO, N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-7090f5e51e5e2027d60f49af33ffc7c835cb6e78844618ef8509d4013ca7e6433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KI-JOON KIM</creatorcontrib><creatorcontrib>SUEMITSU, M</creatorcontrib><creatorcontrib>YAMANAKA, M</creatorcontrib><creatorcontrib>MIYAMOTO, N</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KI-JOON KIM</au><au>SUEMITSU, M</au><au>YAMANAKA, M</au><au>MIYAMOTO, N</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of mixing germane in silane gas-source molecular beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>1993-06-28</date><risdate>1993</risdate><volume>62</volume><issue>26</issue><spage>3461</spage><epage>3463</epage><pages>3461-3463</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Growth of SiGe gas-source molecular beam epitaxy (GSMBE) using silane/germane mixture has been investigated for the germane content of 0%, 0.8%, and 2.6%. From detailed measurements on the growth rate, a separation into high- and low-temperature regions of the growth rate, as in silane-GSMBE system, has been found to exist in this silane/germane system. A simultaneous measurement on the surface hydrogen coverage has revealed that the growth in the low-temperature region is rate limited by the surface hydrogen desorption process, reasoning the enhanced growth rate with germane in terms of the reduced coverage of the surface hydrogen. All the growth rates followed a same fourth power dependence on the free-adsorption site, which suggests a validity of the four-site adsorption model, established for silane-GSMBE, in silane/germane GSMBE.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.109049</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1993-06, Vol.62 (26), p.3461-3463 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_109049 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Effects of mixing germane in silane gas-source molecular beam epitaxy |
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