Comparative influence of bias and nucleation layer thickness on the heteroepitaxial growth of InN on AlN-nucleated (111) silicon and (00.1) sapphire
The effects of bias and nucleation layer thickness on heteroepitaxy in thin films of InN grown at 400 °C on semiconducting (111) silicon and insulating (00.1) sapphire are shown to be dramatically different. For example, the thickness of an InN film on nucleated (00.1) sapphire is independent of bia...
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| Veröffentlicht in: | Applied physics letters 1993-03, Vol.62 (11), p.1221-1223 |
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| container_title | Applied physics letters |
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| creator | KISTENMACHER, T. J BRYDEN, W. A |
| description | The effects of bias and nucleation layer thickness on heteroepitaxy in thin films of InN grown at 400 °C on semiconducting (111) silicon and insulating (00.1) sapphire are shown to be dramatically different. For example, the thickness of an InN film on nucleated (00.1) sapphire is independent of bias, while on nucleated (111) silicon the thickness varies by over a factor of two. Similarly, the excellent epitaxy of the InN films on nucleated (00.1) sapphire is unaffected by bias or AlN layer thickness, while quality epitaxy on nucleated (111) silicon is achieved only in a narrow range of these parameters. Determining the bounds for heteroepitaxial growth on (111) silicon is a crucial first step toward devices incorporating both sources or detectors and processing elements. |
| doi_str_mv | 10.1063/1.108740 |
| format | Article |
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J ; BRYDEN, W. A</creator><creatorcontrib>KISTENMACHER, T. J ; BRYDEN, W. A</creatorcontrib><description>The effects of bias and nucleation layer thickness on heteroepitaxy in thin films of InN grown at 400 °C on semiconducting (111) silicon and insulating (00.1) sapphire are shown to be dramatically different. For example, the thickness of an InN film on nucleated (00.1) sapphire is independent of bias, while on nucleated (111) silicon the thickness varies by over a factor of two. Similarly, the excellent epitaxy of the InN films on nucleated (00.1) sapphire is unaffected by bias or AlN layer thickness, while quality epitaxy on nucleated (111) silicon is achieved only in a narrow range of these parameters. 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Determining the bounds for heteroepitaxial growth on (111) silicon is a crucial first step toward devices incorporating both sources or detectors and processing elements.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kM1OwzAQhC0EEqUg8Qg-cCiHgDd2_o5VxU-lqlzgHDnOmhhcJ7JToO_BA-OqFafRzn6aXQ0h18DugOX8HqKUhWAnZAKsKBIOUJ6SCWOMJ3mVwTm5COEjjlnK-YT8LvrNIL0czRdS47TdolNIe00bIwOVrqVuqyxGoHfUyh16OnZGfToMgUZr7JB2OKLvcTCj_DHS0nfff4_dPmTp1ntobtfJMQZbOgOAWxqMNSru9idmLH4fLTkMnfF4Sc60tAGvjjolb48Pr4vnZPXytFzMV4niKRuTNq8EZqpVTY6gWZFmjUy1BqZL3VYcSi1KrHJZCOANV5iyVkshICtjRaLRfEpmh1zl-xA86nrwZiP9rgZW79usoT60GdGbAzrIoKTVXjplwj8vcl5AXvE_IuV0FA</recordid><startdate>19930315</startdate><enddate>19930315</enddate><creator>KISTENMACHER, T. 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A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KISTENMACHER, T. J</au><au>BRYDEN, W. A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparative influence of bias and nucleation layer thickness on the heteroepitaxial growth of InN on AlN-nucleated (111) silicon and (00.1) sapphire</atitle><jtitle>Applied physics letters</jtitle><date>1993-03-15</date><risdate>1993</risdate><volume>62</volume><issue>11</issue><spage>1221</spage><epage>1223</epage><pages>1221-1223</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The effects of bias and nucleation layer thickness on heteroepitaxy in thin films of InN grown at 400 °C on semiconducting (111) silicon and insulating (00.1) sapphire are shown to be dramatically different. For example, the thickness of an InN film on nucleated (00.1) sapphire is independent of bias, while on nucleated (111) silicon the thickness varies by over a factor of two. Similarly, the excellent epitaxy of the InN films on nucleated (00.1) sapphire is unaffected by bias or AlN layer thickness, while quality epitaxy on nucleated (111) silicon is achieved only in a narrow range of these parameters. Determining the bounds for heteroepitaxial growth on (111) silicon is a crucial first step toward devices incorporating both sources or detectors and processing elements.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.108740</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1993-03, Vol.62 (11), p.1221-1223 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_108740 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Comparative influence of bias and nucleation layer thickness on the heteroepitaxial growth of InN on AlN-nucleated (111) silicon and (00.1) sapphire |
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