Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation
Ordered diamond films have been deposited on single-crystal silicon substrates via an in situ carburization followed by bias-enhanced nucleation. Textured diamond films with greater than 50% of the grains oriented D(100)//Si(100) and D〈110〉//Si〈110〉 were grown in both a horizontal and vertical micro...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 1993-03, Vol.62 (11), p.1215-1217 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1217 |
|---|---|
| container_issue | 11 |
| container_start_page | 1215 |
| container_title | Applied physics letters |
| container_volume | 62 |
| creator | WOLTER, S. D STONER, B. R GLASS, J. T ELLIS, P. J BUHAENKO, D. S JENKINS, C. E SOUTHWORTH, P |
| description | Ordered diamond films have been deposited on single-crystal silicon substrates via an in situ carburization followed by bias-enhanced nucleation. Textured diamond films with greater than 50% of the grains oriented D(100)//Si(100) and D〈110〉//Si〈110〉 were grown in both a horizontal and vertical microwave plasma chemical vapor deposition reactor. Separate diamond films from each of the two reactors were analyzed both by scanning electron microscopy and Raman spectroscopy. The in situ carburization is speculated to form an epitaxial SiC conversion layer, thus providing an economical alternative to obtaining epitaxial diamond films on single-crystal SiC. |
| doi_str_mv | 10.1063/1.108738 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_108738</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4637167</sourcerecordid><originalsourceid>FETCH-LOGICAL-c237t-ff172d8ae6ea44e5192b251024da7a59fb5529eccb9b013046ccbfa5c3274cf33</originalsourceid><addsrcrecordid>eNo9kEtLxDAUhYMoOI6CPyELF26qublN0y5l8AUDbsadUG7TxIl02iFpff16M464OvdwPg6Xw9g5iCsQBV5DklJjecBmILTOEKA8ZDMhBGZFpeCYncT4lqySiDP2srKf4xRsy1_D8DGu-eB462kz9C0feh59503Sd0_c7-w4cUOhmYL_ptGnhBLYeIqZ7dfUm1TUT6azv-EpO3LURXv2p3P2fHe7Wjxky6f7x8XNMjMS9Zg5B1q2JdnCUp5bBZVspAIh85Y0qco1SsnKGtNUjQAUeZFOR8qg1LlxiHN2ue81YYgxWFdvg99Q-KpB1LtVaqj3qyT0Yo9uKRrqXEg_-_jP5wVqKDT-ACN9Yjs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation</title><source>AIP Digital Archive</source><creator>WOLTER, S. D ; STONER, B. R ; GLASS, J. T ; ELLIS, P. J ; BUHAENKO, D. S ; JENKINS, C. E ; SOUTHWORTH, P</creator><creatorcontrib>WOLTER, S. D ; STONER, B. R ; GLASS, J. T ; ELLIS, P. J ; BUHAENKO, D. S ; JENKINS, C. E ; SOUTHWORTH, P</creatorcontrib><description>Ordered diamond films have been deposited on single-crystal silicon substrates via an in situ carburization followed by bias-enhanced nucleation. Textured diamond films with greater than 50% of the grains oriented D(100)//Si(100) and D〈110〉//Si〈110〉 were grown in both a horizontal and vertical microwave plasma chemical vapor deposition reactor. Separate diamond films from each of the two reactors were analyzed both by scanning electron microscopy and Raman spectroscopy. The in situ carburization is speculated to form an epitaxial SiC conversion layer, thus providing an economical alternative to obtaining epitaxial diamond films on single-crystal SiC.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.108738</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Applied physics letters, 1993-03, Vol.62 (11), p.1215-1217</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c237t-ff172d8ae6ea44e5192b251024da7a59fb5529eccb9b013046ccbfa5c3274cf33</citedby><cites>FETCH-LOGICAL-c237t-ff172d8ae6ea44e5192b251024da7a59fb5529eccb9b013046ccbfa5c3274cf33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4637167$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>WOLTER, S. D</creatorcontrib><creatorcontrib>STONER, B. R</creatorcontrib><creatorcontrib>GLASS, J. T</creatorcontrib><creatorcontrib>ELLIS, P. J</creatorcontrib><creatorcontrib>BUHAENKO, D. S</creatorcontrib><creatorcontrib>JENKINS, C. E</creatorcontrib><creatorcontrib>SOUTHWORTH, P</creatorcontrib><title>Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation</title><title>Applied physics letters</title><description>Ordered diamond films have been deposited on single-crystal silicon substrates via an in situ carburization followed by bias-enhanced nucleation. Textured diamond films with greater than 50% of the grains oriented D(100)//Si(100) and D〈110〉//Si〈110〉 were grown in both a horizontal and vertical microwave plasma chemical vapor deposition reactor. Separate diamond films from each of the two reactors were analyzed both by scanning electron microscopy and Raman spectroscopy. The in situ carburization is speculated to form an epitaxial SiC conversion layer, thus providing an economical alternative to obtaining epitaxial diamond films on single-crystal SiC.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLxDAUhYMoOI6CPyELF26qublN0y5l8AUDbsadUG7TxIl02iFpff16M464OvdwPg6Xw9g5iCsQBV5DklJjecBmILTOEKA8ZDMhBGZFpeCYncT4lqySiDP2srKf4xRsy1_D8DGu-eB462kz9C0feh59503Sd0_c7-w4cUOhmYL_ptGnhBLYeIqZ7dfUm1TUT6azv-EpO3LURXv2p3P2fHe7Wjxky6f7x8XNMjMS9Zg5B1q2JdnCUp5bBZVspAIh85Y0qco1SsnKGtNUjQAUeZFOR8qg1LlxiHN2ue81YYgxWFdvg99Q-KpB1LtVaqj3qyT0Yo9uKRrqXEg_-_jP5wVqKDT-ACN9Yjs</recordid><startdate>19930315</startdate><enddate>19930315</enddate><creator>WOLTER, S. D</creator><creator>STONER, B. R</creator><creator>GLASS, J. T</creator><creator>ELLIS, P. J</creator><creator>BUHAENKO, D. S</creator><creator>JENKINS, C. E</creator><creator>SOUTHWORTH, P</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930315</creationdate><title>Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation</title><author>WOLTER, S. D ; STONER, B. R ; GLASS, J. T ; ELLIS, P. J ; BUHAENKO, D. S ; JENKINS, C. E ; SOUTHWORTH, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c237t-ff172d8ae6ea44e5192b251024da7a59fb5529eccb9b013046ccbfa5c3274cf33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WOLTER, S. D</creatorcontrib><creatorcontrib>STONER, B. R</creatorcontrib><creatorcontrib>GLASS, J. T</creatorcontrib><creatorcontrib>ELLIS, P. J</creatorcontrib><creatorcontrib>BUHAENKO, D. S</creatorcontrib><creatorcontrib>JENKINS, C. E</creatorcontrib><creatorcontrib>SOUTHWORTH, P</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WOLTER, S. D</au><au>STONER, B. R</au><au>GLASS, J. T</au><au>ELLIS, P. J</au><au>BUHAENKO, D. S</au><au>JENKINS, C. E</au><au>SOUTHWORTH, P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation</atitle><jtitle>Applied physics letters</jtitle><date>1993-03-15</date><risdate>1993</risdate><volume>62</volume><issue>11</issue><spage>1215</spage><epage>1217</epage><pages>1215-1217</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Ordered diamond films have been deposited on single-crystal silicon substrates via an in situ carburization followed by bias-enhanced nucleation. Textured diamond films with greater than 50% of the grains oriented D(100)//Si(100) and D〈110〉//Si〈110〉 were grown in both a horizontal and vertical microwave plasma chemical vapor deposition reactor. Separate diamond films from each of the two reactors were analyzed both by scanning electron microscopy and Raman spectroscopy. The in situ carburization is speculated to form an epitaxial SiC conversion layer, thus providing an economical alternative to obtaining epitaxial diamond films on single-crystal SiC.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.108738</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1993-03, Vol.62 (11), p.1215-1217 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_108738 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T12%3A25%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Textured%20growth%20of%20diamond%20on%20silicon%20via%20in%20situ%20carburization%20and%20bias-enhanced%20nucleation&rft.jtitle=Applied%20physics%20letters&rft.au=WOLTER,%20S.%20D&rft.date=1993-03-15&rft.volume=62&rft.issue=11&rft.spage=1215&rft.epage=1217&rft.pages=1215-1217&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.108738&rft_dat=%3Cpascalfrancis_cross%3E4637167%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |