Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices
We present an ellipsometric study of two Si0.5Ge0.5/Si strained-layer superlattices grown by MBE at low temperature (500 °C), and compare our results with x-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available SixGe1−...
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Veröffentlicht in: | Applied physics letters 1993-04, Vol.62 (14), p.1626-1628 |
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creator | SIEG, R. M ALTEROVITZ, S. A CROKE, E. T HARRELL, M. J |
description | We present an ellipsometric study of two Si0.5Ge0.5/Si strained-layer superlattices grown by MBE at low temperature (500 °C), and compare our results with x-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available SixGe1−x databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, SixGe1−x composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point. |
doi_str_mv | 10.1063/1.108607 |
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M ; ALTEROVITZ, S. A ; CROKE, E. T ; HARRELL, M. J</creator><creatorcontrib>SIEG, R. M ; ALTEROVITZ, S. A ; CROKE, E. T ; HARRELL, M. J</creatorcontrib><description>We present an ellipsometric study of two Si0.5Ge0.5/Si strained-layer superlattices grown by MBE at low temperature (500 °C), and compare our results with x-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available SixGe1−x databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, SixGe1−x composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.108607</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Applied physics letters, 1993-04, Vol.62 (14), p.1626-1628</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c288t-c28922fc0f841ab7e5509f178676f70d00401887f7986aff0c816ed5a36819623</citedby><cites>FETCH-LOGICAL-c288t-c28922fc0f841ab7e5509f178676f70d00401887f7986aff0c816ed5a36819623</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4679866$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SIEG, R. M</creatorcontrib><creatorcontrib>ALTEROVITZ, S. A</creatorcontrib><creatorcontrib>CROKE, E. T</creatorcontrib><creatorcontrib>HARRELL, M. J</creatorcontrib><title>Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices</title><title>Applied physics letters</title><description>We present an ellipsometric study of two Si0.5Ge0.5/Si strained-layer superlattices grown by MBE at low temperature (500 °C), and compare our results with x-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available SixGe1−x databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, SixGe1−x composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9j09Lw0AQxRdRMFbBj5CDBy9pZ7LZPzmWUqtQ8FA9h3WzAyvbJuymh3x7Eyq9vMcbfszjMfaMsESQfIWTaQnqhmUIShUcUd-yDAB4IWuB9-whpd8pipLzjK23Ifg-dUc3RG_zNJzbMe8oP3hYip2bZHXw0zkaf3JtEczoYp7OvYvBDIO3Lj2yOzIhuad_X7Dvt-3X5r3Yf-4-Nut9YUuth1nrsiQLpCs0P8oJATWh0lJJUtACVIBaK1K1loYIrEbpWmG41FjLki_Y6-WvjV1K0VHTR380cWwQmnl6g81l-oS-XNDeJGsCRXOyPl35Ss4dkv8BD8pVqA</recordid><startdate>19930405</startdate><enddate>19930405</enddate><creator>SIEG, R. M</creator><creator>ALTEROVITZ, S. A</creator><creator>CROKE, E. T</creator><creator>HARRELL, M. J</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930405</creationdate><title>Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices</title><author>SIEG, R. M ; ALTEROVITZ, S. A ; CROKE, E. T ; HARRELL, M. J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c288t-c28922fc0f841ab7e5509f178676f70d00401887f7986aff0c816ed5a36819623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SIEG, R. M</creatorcontrib><creatorcontrib>ALTEROVITZ, S. A</creatorcontrib><creatorcontrib>CROKE, E. T</creatorcontrib><creatorcontrib>HARRELL, M. J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SIEG, R. M</au><au>ALTEROVITZ, S. A</au><au>CROKE, E. T</au><au>HARRELL, M. J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices</atitle><jtitle>Applied physics letters</jtitle><date>1993-04-05</date><risdate>1993</risdate><volume>62</volume><issue>14</issue><spage>1626</spage><epage>1628</epage><pages>1626-1628</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We present an ellipsometric study of two Si0.5Ge0.5/Si strained-layer superlattices grown by MBE at low temperature (500 °C), and compare our results with x-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available SixGe1−x databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, SixGe1−x composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.108607</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
title | Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices |
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