Buried single-crystal CoSi2 layers in SiGe alloys made by ion beam synthesis
The synthesis of buried CoSi2 layers in Si0.91Ge0.09 alloys by the implantation of high doses of 100 and 150 keV Co+ ions and subsequent rapid thermal annealing at T≥1000 °C is studied by x-ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger electron spectroscopy, and t...
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| Veröffentlicht in: | Applied physics letters 1992-11, Vol.61 (20), p.2409-2411 |
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| container_title | Applied physics letters |
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| creator | JEBASINSKI, R MANTL, S DIEKER, C CRECELIUS, G DEDERICHS, H VESCAN, L |
| description | The synthesis of buried CoSi2 layers in Si0.91Ge0.09 alloys by the implantation of high doses of 100 and 150 keV Co+ ions and subsequent rapid thermal annealing at T≥1000 °C is studied by x-ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger electron spectroscopy, and transmission electron microscopy. After annealing, a buried single-crystal CoSi2 layer containing ≊1 at. % Ge is formed in the SiGe alloy. Silicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. The remaining Ge within the silicide layer is found to be present as Si-Ge islands with the composition of the virgin Si0.91Ge0.09 alloy. |
| doi_str_mv | 10.1063/1.108180 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_108180</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4446496</sourcerecordid><originalsourceid>FETCH-LOGICAL-c290t-b356509df1514e19078850cb13cfcb1e4ceaca7876065f8aef36f3e8b71c973c3</originalsourceid><addsrcrecordid>eNo9kEtLAzEUhYMoWKvgT8jChZvRe5vJY5ZafEHBRXU9ZNIbjaQzJbcu5t87UnFzPg58nMUR4hLhBsGoW5zg0MGRmCFYWylEdyxmAKAq02g8FWfMX1PVC6VmYnX_XRJtJKf-I1MVysh7n-VyWKeFzH6kwjL1cp2eSPqch5Hl1m9IdqNMQy878lvJY7__JE58Lk6iz0wXf5yL98eHt-VztXp9elneraqwaGBfdUobDc0mosaasAHrnIbQoQpxSqoD-eCtswaMjs5TVCYqcp3F0FgV1FxcH3ZDGZgLxXZX0taXsUVof19osT28MKlXB3XnOfgci-9D4n-_rmtTN0b9APmeWs4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Buried single-crystal CoSi2 layers in SiGe alloys made by ion beam synthesis</title><source>AIP Digital Archive</source><creator>JEBASINSKI, R ; MANTL, S ; DIEKER, C ; CRECELIUS, G ; DEDERICHS, H ; VESCAN, L</creator><creatorcontrib>JEBASINSKI, R ; MANTL, S ; DIEKER, C ; CRECELIUS, G ; DEDERICHS, H ; VESCAN, L</creatorcontrib><description>The synthesis of buried CoSi2 layers in Si0.91Ge0.09 alloys by the implantation of high doses of 100 and 150 keV Co+ ions and subsequent rapid thermal annealing at T≥1000 °C is studied by x-ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger electron spectroscopy, and transmission electron microscopy. After annealing, a buried single-crystal CoSi2 layer containing ≊1 at. % Ge is formed in the SiGe alloy. Silicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. The remaining Ge within the silicide layer is found to be present as Si-Ge islands with the composition of the virgin Si0.91Ge0.09 alloy.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.108180</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Applied physics letters, 1992-11, Vol.61 (20), p.2409-2411</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c290t-b356509df1514e19078850cb13cfcb1e4ceaca7876065f8aef36f3e8b71c973c3</citedby><cites>FETCH-LOGICAL-c290t-b356509df1514e19078850cb13cfcb1e4ceaca7876065f8aef36f3e8b71c973c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4446496$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JEBASINSKI, R</creatorcontrib><creatorcontrib>MANTL, S</creatorcontrib><creatorcontrib>DIEKER, C</creatorcontrib><creatorcontrib>CRECELIUS, G</creatorcontrib><creatorcontrib>DEDERICHS, H</creatorcontrib><creatorcontrib>VESCAN, L</creatorcontrib><title>Buried single-crystal CoSi2 layers in SiGe alloys made by ion beam synthesis</title><title>Applied physics letters</title><description>The synthesis of buried CoSi2 layers in Si0.91Ge0.09 alloys by the implantation of high doses of 100 and 150 keV Co+ ions and subsequent rapid thermal annealing at T≥1000 °C is studied by x-ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger electron spectroscopy, and transmission electron microscopy. After annealing, a buried single-crystal CoSi2 layer containing ≊1 at. % Ge is formed in the SiGe alloy. Silicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. The remaining Ge within the silicide layer is found to be present as Si-Ge islands with the composition of the virgin Si0.91Ge0.09 alloy.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLAzEUhYMoWKvgT8jChZvRe5vJY5ZafEHBRXU9ZNIbjaQzJbcu5t87UnFzPg58nMUR4hLhBsGoW5zg0MGRmCFYWylEdyxmAKAq02g8FWfMX1PVC6VmYnX_XRJtJKf-I1MVysh7n-VyWKeFzH6kwjL1cp2eSPqch5Hl1m9IdqNMQy878lvJY7__JE58Lk6iz0wXf5yL98eHt-VztXp9elneraqwaGBfdUobDc0mosaasAHrnIbQoQpxSqoD-eCtswaMjs5TVCYqcp3F0FgV1FxcH3ZDGZgLxXZX0taXsUVof19osT28MKlXB3XnOfgci-9D4n-_rmtTN0b9APmeWs4</recordid><startdate>19921116</startdate><enddate>19921116</enddate><creator>JEBASINSKI, R</creator><creator>MANTL, S</creator><creator>DIEKER, C</creator><creator>CRECELIUS, G</creator><creator>DEDERICHS, H</creator><creator>VESCAN, L</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19921116</creationdate><title>Buried single-crystal CoSi2 layers in SiGe alloys made by ion beam synthesis</title><author>JEBASINSKI, R ; MANTL, S ; DIEKER, C ; CRECELIUS, G ; DEDERICHS, H ; VESCAN, L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c290t-b356509df1514e19078850cb13cfcb1e4ceaca7876065f8aef36f3e8b71c973c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JEBASINSKI, R</creatorcontrib><creatorcontrib>MANTL, S</creatorcontrib><creatorcontrib>DIEKER, C</creatorcontrib><creatorcontrib>CRECELIUS, G</creatorcontrib><creatorcontrib>DEDERICHS, H</creatorcontrib><creatorcontrib>VESCAN, L</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JEBASINSKI, R</au><au>MANTL, S</au><au>DIEKER, C</au><au>CRECELIUS, G</au><au>DEDERICHS, H</au><au>VESCAN, L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Buried single-crystal CoSi2 layers in SiGe alloys made by ion beam synthesis</atitle><jtitle>Applied physics letters</jtitle><date>1992-11-16</date><risdate>1992</risdate><volume>61</volume><issue>20</issue><spage>2409</spage><epage>2411</epage><pages>2409-2411</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The synthesis of buried CoSi2 layers in Si0.91Ge0.09 alloys by the implantation of high doses of 100 and 150 keV Co+ ions and subsequent rapid thermal annealing at T≥1000 °C is studied by x-ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger electron spectroscopy, and transmission electron microscopy. After annealing, a buried single-crystal CoSi2 layer containing ≊1 at. % Ge is formed in the SiGe alloy. Silicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. The remaining Ge within the silicide layer is found to be present as Si-Ge islands with the composition of the virgin Si0.91Ge0.09 alloy.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.108180</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 1992-11, Vol.61 (20), p.2409-2411 |
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| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_108180 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Buried single-crystal CoSi2 layers in SiGe alloys made by ion beam synthesis |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T09%3A45%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Buried%20single-crystal%20CoSi2%20layers%20in%20SiGe%20alloys%20made%20by%20ion%20beam%20synthesis&rft.jtitle=Applied%20physics%20letters&rft.au=JEBASINSKI,%20R&rft.date=1992-11-16&rft.volume=61&rft.issue=20&rft.spage=2409&rft.epage=2411&rft.pages=2409-2411&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.108180&rft_dat=%3Cpascalfrancis_cross%3E4446496%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |