Kinetics of nucleation and growth of Si on SiO2 in very low pressure SiH4 chemical vapor deposition
The initial growth kinetics for SiH4 chemical vapor deposition of Si on SiO2 at low temperature (500–600 °C) have been revealed using rapid thermal UHV-CVD, together with in situ H2 thermal desorption spectroscopy to titrate the amount of exposed Si surface. In the few mTorr pressure range, the reac...
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| Veröffentlicht in: | Applied physics letters 1992-12, Vol.61 (25), p.3035-3037 |
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| container_end_page | 3037 |
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| container_issue | 25 |
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| container_title | Applied physics letters |
| container_volume | 61 |
| creator | DANA, S. S LIEHR, M ANDERLE, M RUBLOFF, G. W |
| description | The initial growth kinetics for SiH4 chemical vapor deposition of Si on SiO2 at low temperature (500–600 °C) have been revealed using rapid thermal UHV-CVD, together with in situ H2 thermal desorption spectroscopy to titrate the amount of exposed Si surface. In the few mTorr pressure range, the reaction is heterogeneous, i.e., dominated by surface reaction. Below ∼0.7 monolayer Si coverage, the growth kinetics is rapid (∼t4), indicating spontaneous generation of new nuclei, while at higher coverage Si island growth dominates. |
| doi_str_mv | 10.1063/1.108001 |
| format | Article |
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W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Kinetics of nucleation and growth of Si on SiO2 in very low pressure SiH4 chemical vapor deposition</atitle><jtitle>Applied physics letters</jtitle><date>1992-12-21</date><risdate>1992</risdate><volume>61</volume><issue>25</issue><spage>3035</spage><epage>3037</epage><pages>3035-3037</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The initial growth kinetics for SiH4 chemical vapor deposition of Si on SiO2 at low temperature (500–600 °C) have been revealed using rapid thermal UHV-CVD, together with in situ H2 thermal desorption spectroscopy to titrate the amount of exposed Si surface. In the few mTorr pressure range, the reaction is heterogeneous, i.e., dominated by surface reaction. Below ∼0.7 monolayer Si coverage, the growth kinetics is rapid (∼t4), indicating spontaneous generation of new nuclei, while at higher coverage Si island growth dominates.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.108001</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1992-12, Vol.61 (25), p.3035-3037 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_108001 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Kinetics of nucleation and growth of Si on SiO2 in very low pressure SiH4 chemical vapor deposition |
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