Electronic properties of Se-treated SiO2/GaAs interfaces

Electronic properties of Se-treated SiO2/GaAs interfaces

GaAs metal-insulator-semiconductor diodes with a Se-treated interface and photochemical-vapor-deposited SiO2 are investigated. The diodes show little frequency dispersion in the capacitance at any accumulation bias, only a few percent between 1 kHz and 1 MHz. Analysis using Terman’s method shows tha...

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Veröffentlicht in:Applied physics letters 1992-06, Vol.60 (22), p.2785-2787
Hauptverfasser: KIKAWA, T, TAKATANI, S, TEZEN, Y
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Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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creator KIKAWA, T
TAKATANI, S
TEZEN, Y
description GaAs metal-insulator-semiconductor diodes with a Se-treated interface and photochemical-vapor-deposited SiO2 are investigated. The diodes show little frequency dispersion in the capacitance at any accumulation bias, only a few percent between 1 kHz and 1 MHz. Analysis using Terman’s method shows that the density of interface states near the midgap is drastically reduced. In addition, insertion of a Se-treated AlGaAs thin layer at the insulator/semiconductor interface is found to reduce the number of interface states near the conduction band minimum. These improved characteristics are preserved after annealing to 400 °C.
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Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KIKAWA, T</creatorcontrib><creatorcontrib>TAKATANI, S</creatorcontrib><creatorcontrib>TEZEN, Y</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KIKAWA, T</au><au>TAKATANI, S</au><au>TEZEN, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic properties of Se-treated SiO2/GaAs interfaces</atitle><jtitle>Applied physics letters</jtitle><date>1992-06-01</date><risdate>1992</risdate><volume>60</volume><issue>22</issue><spage>2785</spage><epage>2787</epage><pages>2785-2787</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>GaAs metal-insulator-semiconductor diodes with a Se-treated interface and photochemical-vapor-deposited SiO2 are investigated. 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subjects Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Electronic properties of Se-treated SiO2/GaAs interfaces
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