Effects of compressive and tensile uniaxial stress on the operation of AlGaAs/GaAs quantum-well lasers

The consequences of strain on the threshold current, relaxation oscillation frequency, and wavelength of operation of lasers have been investigated using an external uniaxial stress impressed on Ga1−xAlxAs/GaAs ridge-guide quantum-well lasers employing graded index and separate confinement. Under th...

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Veröffentlicht in:	Applied physics letters 1992-01, Vol.60 (4), p.413-415
Hauptverfasser:	TIWARI, S, BATES, R. S, HARDER, C. S, BEHFAR-RAD, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
Online-Zugang:	Volltext
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