Local mirror temperatures of red-emitting (AI)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements

Temperature rises were measured on cleaved, uncoated mirror facets of junction-side-up mounted (Al)GaInP laser diodes as a function of the injection current by Raman spectroscopy via the Stokes/anti-Stokes phonon line intensity ratio and the phonon line shift as well as by reflectance modulation as...

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Veröffentlicht in:	Applied physics letters 1992-02, Vol.60 (6), p.680-682
Hauptverfasser:	EPPERLEIN, P. W, BONA, G. L, ROENTGEN, P
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
Online-Zugang:	Volltext
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