Local mirror temperatures of red-emitting (AI)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements
Temperature rises were measured on cleaved, uncoated mirror facets of junction-side-up mounted (Al)GaInP laser diodes as a function of the injection current by Raman spectroscopy via the Stokes/anti-Stokes phonon line intensity ratio and the phonon line shift as well as by reflectance modulation as...
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| Veröffentlicht in: | Applied physics letters 1992-02, Vol.60 (6), p.680-682 |
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| container_title | Applied physics letters |
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| creator | EPPERLEIN, P. W BONA, G. L ROENTGEN, P |
| description | Temperature rises were measured on cleaved, uncoated mirror facets of junction-side-up mounted (Al)GaInP laser diodes as a function of the injection current by Raman spectroscopy via the Stokes/anti-Stokes phonon line intensity ratio and the phonon line shift as well as by reflectance modulation as a novel application for laser mirror characterization. Below the threshold current the temperature rise is due to Joule heating of the drive current across the ohmic resistor and is ΔT≂35 K at threshold. Above threshold a significant power-dependent heating caused by absorption of laser radiation is superimposed. In this regime the temperature increase is considerably high, i.e., ΔT≥100 K at 4 mW for 5-μm-wide ridge lasers. The different measurement techniques have produced consistent data. |
| doi_str_mv | 10.1063/1.106563 |
| format | Article |
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In this regime the temperature increase is considerably high, i.e., ΔT≥100 K at 4 mW for 5-μm-wide ridge lasers. The different measurement techniques have produced consistent data.</description><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Lasers</subject><subject>Optics</subject><subject>Physics</subject><subject>Semiconductor lasers; laser diodes</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9UMFKAzEUDKJgrYKfkIOHelhNNt1scyxFa6GgiJ6Xt8mLrCS7Ncki_QT_2pSKp-HBzLyZIeSaszvOpLjnB6ikOCETzuq6EJwvTsmEMSYKqSp-Ti5i_MxnVQoxIT_bQYOjvgthCDSh32GANAaMdLA0oCnQdyl1_QedLTe3a9j0L_RrhD6NvvhG56iDiIGabjBZ0-7pK3joadSQEoaDDnqTjaxDnaDXSP1gRgepG3rqEWL-5bFP8ZKcWXARr_5wSt4fH95WT8X2eb1ZLbeFFiVLBZdaG6uUEqxshZ7rGuy8VlIirwzWLROlsvOFRGWRGy5bBrUtrZHSzLHSlZiS2dFXhyHGHKzZhc5D2DecNYcJG94cJ8zUmyN1B7mPsyHn7-I_v-JMLbgQv1bjcsY</recordid><startdate>19920210</startdate><enddate>19920210</enddate><creator>EPPERLEIN, P. 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L ; ROENTGEN, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-16ccdf999302b3c4c7af47966e15de7b0329f486e9fe1d16b0a7f2fd66d4e5c53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Lasers</topic><topic>Optics</topic><topic>Physics</topic><topic>Semiconductor lasers; laser diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>EPPERLEIN, P. W</creatorcontrib><creatorcontrib>BONA, G. L</creatorcontrib><creatorcontrib>ROENTGEN, P</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>EPPERLEIN, P. W</au><au>BONA, G. L</au><au>ROENTGEN, P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Local mirror temperatures of red-emitting (AI)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements</atitle><jtitle>Applied physics letters</jtitle><date>1992-02-10</date><risdate>1992</risdate><volume>60</volume><issue>6</issue><spage>680</spage><epage>682</epage><pages>680-682</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Temperature rises were measured on cleaved, uncoated mirror facets of junction-side-up mounted (Al)GaInP laser diodes as a function of the injection current by Raman spectroscopy via the Stokes/anti-Stokes phonon line intensity ratio and the phonon line shift as well as by reflectance modulation as a novel application for laser mirror characterization. Below the threshold current the temperature rise is due to Joule heating of the drive current across the ohmic resistor and is ΔT≂35 K at threshold. Above threshold a significant power-dependent heating caused by absorption of laser radiation is superimposed. In this regime the temperature increase is considerably high, i.e., ΔT≥100 K at 4 mW for 5-μm-wide ridge lasers. The different measurement techniques have produced consistent data.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.106563</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1992-02, Vol.60 (6), p.680-682 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_106563 |
| source | AIP Digital Archive |
| subjects | Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes |
| title | Local mirror temperatures of red-emitting (AI)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements |
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