Electron resonant tunneling in Si/SiGe double barrier diodes

Electron resonant tunneling in Si/SiGe double barrier diodes

We report upon the fabrication and characterization of the first n-type resonant tunneling diodes in the SiGe materials system. The devices fabricated were Si/SiGe/Si/SiGe/Si double-barrier diodes, employing strain-relieved SiGe as the barrier layers surrounding pseudomorphic tensile strained Si. Th...

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Veröffentlicht in:Applied physics letters 1991-08, Vol.59 (8), p.973-975
Hauptverfasser: ISMAIL, K, MEYERSON, B. S, WANG, P. J
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Applied sciences
Electronics
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Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_title Applied physics letters
container_volume 59
creator ISMAIL, K
MEYERSON, B. S
WANG, P. J
description We report upon the fabrication and characterization of the first n-type resonant tunneling diodes in the SiGe materials system. The devices fabricated were Si/SiGe/Si/SiGe/Si double-barrier diodes, employing strain-relieved SiGe as the barrier layers surrounding pseudomorphic tensile strained Si. These devices were prepared using ultrahigh vacuum chemical vapor deposition. Negative differential conductance is observed at room temperature in these devices with a peak-to-valley ratio of 1.2. The corresponding value at 77 K is 1.5.
doi_str_mv 10.1063/1.106319
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subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Electron resonant tunneling in Si/SiGe double barrier diodes
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