Silicon epitaxy at 230 °C by reactive dc magnetron sputtering and its in   situ ellipsometry monitoring

We report epitaxial growth of silicon on Si(100) at 230 °C by reactive dc magnetron sputter deposition. Growth is monitored with in situ multiwavelength ellipsometry to determine the film microstructure. Film crystallinity depends on the partial pressure of hydrogen during deposition, and the best f...

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Veröffentlicht in:	Applied physics letters 1991-07, Vol.59 (3), p.330-332
Hauptverfasser:	Feng, G. F., Katiyar, M., Maley, N., Abelson, J. R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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