Silicon epitaxy at 230 °C by reactive dc magnetron sputtering and its in   situ ellipsometry monitoring

Silicon epitaxy at 230 °C by reactive dc magnetron sputtering and its in   situ ellipsometry monitoring

We report epitaxial growth of silicon on Si(100) at 230 °C by reactive dc magnetron sputter deposition. Growth is monitored with in situ multiwavelength ellipsometry to determine the film microstructure. Film crystallinity depends on the partial pressure of hydrogen during deposition, and the best f...

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Veröffentlicht in:Applied physics letters 1991-07, Vol.59 (3), p.330-332
Hauptverfasser: Feng, G. F., Katiyar, M., Maley, N., Abelson, J. R.
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container_title Applied physics letters
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creator Feng, G. F.
Katiyar, M.
Maley, N.
Abelson, J. R.
description We report epitaxial growth of silicon on Si(100) at 230 °C by reactive dc magnetron sputter deposition. Growth is monitored with in situ multiwavelength ellipsometry to determine the film microstructure. Film crystallinity depends on the partial pressure of hydrogen during deposition, and the best film is obtained with 2 mTorr H2. The films are found to have a bulk density deficit of a few percent and a low-density layer at the film-substrate interface. The microstructure is confirmed by transmission electron microscopy measurements. Infrared absorption and thermal hydrogen evolution measurements indicate that a large amount of molecular hydrogen is present at the substrate interface. We discuss the possible roles of hydrogen and particle bombardment in promoting epitaxial growth.
doi_str_mv 10.1063/1.105586
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Film crystallinity depends on the partial pressure of hydrogen during deposition, and the best film is obtained with 2 mTorr H2. The films are found to have a bulk density deficit of a few percent and a low-density layer at the film-substrate interface. The microstructure is confirmed by transmission electron microscopy measurements. Infrared absorption and thermal hydrogen evolution measurements indicate that a large amount of molecular hydrogen is present at the substrate interface. We discuss the possible roles of hydrogen and particle bombardment in promoting epitaxial growth.</abstract><doi>10.1063/1.105586</doi><tpages>3</tpages></addata></record>
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title Silicon epitaxy at 230 °C by reactive dc magnetron sputtering and its in   situ ellipsometry monitoring
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