Carrier concentration determination by photoreflectance at E 1 in thin film, highly doped GaAs

Photoreflectance (PR) response at the E1 (2.9 eV) transition of GaAs doped with Si, Zn, and Be was investigated within the range of 1.5×1015 to 2×1019 cm−3. Growth technique was either metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). We find that Γ1, the broadening par...

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Veröffentlicht in:	Applied physics letters 1991-09, Vol.59 (10), p.1218-1220
Hauptverfasser:	Badakhshan, Ali, Glosser, R., Lambert, S., Anthony, Mark, Sillmon, R. S., Thompson, P. E., Alavi, Kambiz
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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