Effect of fluorine on the diffusion of through-oxide implanted boron in silicon

Annealing of boron through-oxide implanted silicon has been known to induce an incubated, oxygen-precipitation enhanced boron diffusion. In this letter, it is shown that annealing the ‘‘through-oxide’’ implants in a NF3-containing N2 ambient effectively reduces the incubated enhanced diffusion. The...

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Veröffentlicht in:	Applied physics letters 1991-09, Vol.59 (10), p.1212-1214
Hauptverfasser:	FAN, D, PARKS, J. M, JACCODINE, R. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of impurities Exact sciences and technology Physics Transport properties of condensed matter (nonelectronic)
Online-Zugang:	Volltext
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