Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111) B substrates

Growth control of GaAs epilayers with specular surface, free of superficial pyramid-shape features and bulk twins, is achieved on a nonmisoriented GaAs(111)B substrate via in situ, real time measurement of specular beam intensity of reflection high-energy electron diffraction (RHEED). Regimes of gro...

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Veröffentlicht in:	Applied physics letters 1991-04, Vol.58 (16), p.1771-1773
Hauptverfasser:	Chen, P., Rajkumar, K. C., Madhukar, A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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