Low-temperature selective epitaxy by ultrahigh-vacuum chemical vapor deposition from SiH4 and GeH4/H2

Selective epitaxy of GexSi1−x in an ultrahigh-vacuum chemical vapor deposition reactor from SiH4 and GeH4/H2 is reported for the first time. Growth is performed at 600 °C on patterned wafers after an 800 °C bake which provides a clean silicon surface. Selective growth is maintained during a short in...

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Veröffentlicht in:	Applied physics letters 1991-05, Vol.58 (19), p.2096-2098
Hauptverfasser:	RACANELLI, M, GREVE, D. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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