EL2 related deep traps in semi-insulating GaAs

Processes induced by below-the-gap illumination and related to defects having deep levels in liquid-encapsulated Czochralski semi-insulating GaAs crystals were studied. It was found that the dynamics of both optical quenching and thermal recovery (above 125 K) of thermally stimulated current signal...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 1991-01, Vol.58 (3), p.278-280
Hauptverfasser:	DESNICA, U. V, DUNJA, I, SANTIC, B
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!