Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells
Photoluminescence in InGaAs/GaAs strained-layer quantum wells is strongly quenched by temperatures above 10–100 K, depending on the well width. Analysis of this dependence shows that the quenching mechanism is thermal activation of electron-hole pairs from the wells into the GaAs barriers, followed...
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| Veröffentlicht in: | Applied physics letters 1990-11, Vol.57 (19), p.1986-1988 |
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| container_end_page | 1988 |
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| container_issue | 19 |
| container_start_page | 1986 |
| container_title | Applied physics letters |
| container_volume | 57 |
| creator | LAMBKIN, J. D DUNSTAN, D. J HOMEWOOD, K. P HOWARD, L. K EMENY, M. T |
| description | Photoluminescence in InGaAs/GaAs strained-layer quantum wells is strongly quenched by temperatures above 10–100 K, depending on the well width. Analysis of this dependence shows that the quenching mechanism is thermal activation of electron-hole pairs from the wells into the GaAs barriers, followed by nonradiative recombination through a loss mechanism in bulk GaAs. The addition of Al to the barriers to improve confinement eliminates loss through this route but introduces another loss mechanism, characterized by an activation energy independent of well width and with a smaller pre-exponential factor. |
| doi_str_mv | 10.1063/1.103987 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_103987</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>19392547</sourcerecordid><originalsourceid>FETCH-LOGICAL-c321t-78072f2a895d0303e0aa34e169e39298836f3cd983c06f9773ba267e295d8c033</originalsourceid><addsrcrecordid>eNpFkFFLwzAUhYMoWKfgT-iL4Etdkrs2yeMYOgcDX-ZzuaaJraTpTDpk_97UKb7cy7nn41w4hNwy-sBoBXOWFigpzkjGqBAFMCbPSUYphaJSJbskVzF-JFlygIy0u9aEHl3-eTBet51_zwebj63J9-0wDu7Qd95EnTwzGRu_xmWcTyNH3_zppfu5xDFgwpvC4dGEFIl-PPT5l3EuXpMLiy6am989I69Pj7vVc7F9WW9Wy22hgbOxEJIKbjlKVTYUKBiKCAvDKmVAcSUlVBZ0oyRoWlklBLwhr4ThiZeaAszI_SlXhyHGYGy9D12P4VgzWk8N1aw-NZTQuxO6x6jR2YBed_GfV-ljuRDwDTtLZDg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells</title><source>AIP Digital Archive</source><creator>LAMBKIN, J. D ; DUNSTAN, D. J ; HOMEWOOD, K. P ; HOWARD, L. K ; EMENY, M. T</creator><creatorcontrib>LAMBKIN, J. D ; DUNSTAN, D. J ; HOMEWOOD, K. P ; HOWARD, L. K ; EMENY, M. T</creatorcontrib><description>Photoluminescence in InGaAs/GaAs strained-layer quantum wells is strongly quenched by temperatures above 10–100 K, depending on the well width. Analysis of this dependence shows that the quenching mechanism is thermal activation of electron-hole pairs from the wells into the GaAs barriers, followed by nonradiative recombination through a loss mechanism in bulk GaAs. The addition of Al to the barriers to improve confinement eliminates loss through this route but introduces another loss mechanism, characterized by an activation energy independent of well width and with a smaller pre-exponential factor.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.103987</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics</subject><ispartof>Applied physics letters, 1990-11, Vol.57 (19), p.1986-1988</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-78072f2a895d0303e0aa34e169e39298836f3cd983c06f9773ba267e295d8c033</citedby><cites>FETCH-LOGICAL-c321t-78072f2a895d0303e0aa34e169e39298836f3cd983c06f9773ba267e295d8c033</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19392547$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LAMBKIN, J. D</creatorcontrib><creatorcontrib>DUNSTAN, D. J</creatorcontrib><creatorcontrib>HOMEWOOD, K. P</creatorcontrib><creatorcontrib>HOWARD, L. K</creatorcontrib><creatorcontrib>EMENY, M. T</creatorcontrib><title>Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells</title><title>Applied physics letters</title><description>Photoluminescence in InGaAs/GaAs strained-layer quantum wells is strongly quenched by temperatures above 10–100 K, depending on the well width. Analysis of this dependence shows that the quenching mechanism is thermal activation of electron-hole pairs from the wells into the GaAs barriers, followed by nonradiative recombination through a loss mechanism in bulk GaAs. The addition of Al to the barriers to improve confinement eliminates loss through this route but introduces another loss mechanism, characterized by an activation energy independent of well width and with a smaller pre-exponential factor.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNpFkFFLwzAUhYMoWKfgT-iL4Etdkrs2yeMYOgcDX-ZzuaaJraTpTDpk_97UKb7cy7nn41w4hNwy-sBoBXOWFigpzkjGqBAFMCbPSUYphaJSJbskVzF-JFlygIy0u9aEHl3-eTBet51_zwebj63J9-0wDu7Qd95EnTwzGRu_xmWcTyNH3_zppfu5xDFgwpvC4dGEFIl-PPT5l3EuXpMLiy6am989I69Pj7vVc7F9WW9Wy22hgbOxEJIKbjlKVTYUKBiKCAvDKmVAcSUlVBZ0oyRoWlklBLwhr4ThiZeaAszI_SlXhyHGYGy9D12P4VgzWk8N1aw-NZTQuxO6x6jR2YBed_GfV-ljuRDwDTtLZDg</recordid><startdate>19901105</startdate><enddate>19901105</enddate><creator>LAMBKIN, J. D</creator><creator>DUNSTAN, D. J</creator><creator>HOMEWOOD, K. P</creator><creator>HOWARD, L. K</creator><creator>EMENY, M. T</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19901105</creationdate><title>Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells</title><author>LAMBKIN, J. D ; DUNSTAN, D. J ; HOMEWOOD, K. P ; HOWARD, L. K ; EMENY, M. T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-78072f2a895d0303e0aa34e169e39298836f3cd983c06f9773ba267e295d8c033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LAMBKIN, J. D</creatorcontrib><creatorcontrib>DUNSTAN, D. J</creatorcontrib><creatorcontrib>HOMEWOOD, K. P</creatorcontrib><creatorcontrib>HOWARD, L. K</creatorcontrib><creatorcontrib>EMENY, M. T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LAMBKIN, J. D</au><au>DUNSTAN, D. J</au><au>HOMEWOOD, K. P</au><au>HOWARD, L. K</au><au>EMENY, M. T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells</atitle><jtitle>Applied physics letters</jtitle><date>1990-11-05</date><risdate>1990</risdate><volume>57</volume><issue>19</issue><spage>1986</spage><epage>1988</epage><pages>1986-1988</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Photoluminescence in InGaAs/GaAs strained-layer quantum wells is strongly quenched by temperatures above 10–100 K, depending on the well width. Analysis of this dependence shows that the quenching mechanism is thermal activation of electron-hole pairs from the wells into the GaAs barriers, followed by nonradiative recombination through a loss mechanism in bulk GaAs. The addition of Al to the barriers to improve confinement eliminates loss through this route but introduces another loss mechanism, characterized by an activation energy independent of well width and with a smaller pre-exponential factor.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.103987</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1990-11, Vol.57 (19), p.1986-1988 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_103987 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics |
| title | Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T11%3A14%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Thermal%20quenching%20of%20the%20photoluminescence%20of%20InGaAs/GaAs%20and%20InGaAs/AlGaAs%20strained-layer%20quantum%20wells&rft.jtitle=Applied%20physics%20letters&rft.au=LAMBKIN,%20J.%20D&rft.date=1990-11-05&rft.volume=57&rft.issue=19&rft.spage=1986&rft.epage=1988&rft.pages=1986-1988&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.103987&rft_dat=%3Cpascalfrancis_cross%3E19392547%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |