Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double-heterostructure lasers
The temperature dependence of the threshold current density of GaInP/AlGaInP double-heterostructure lasers is investigated over a wide temperature range. Using a theoretical calculation of the temperature dependence of the recombination rate in the active layer, the experimentally obtained threshold...
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| Veröffentlicht in: | Applied physics letters 1990-11, Vol.57 (22), p.2291-2293 |
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| container_end_page | 2293 |
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| container_issue | 22 |
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| container_title | Applied physics letters |
| container_volume | 57 |
| creator | HAGEN, S. H VALSTER, A BOERMANS, M. J. B VAN DER HEYDEN, J |
| description | The temperature dependence of the threshold current density of GaInP/AlGaInP double-heterostructure lasers is investigated over a wide temperature range. Using a theoretical calculation of the temperature dependence of the recombination rate in the active layer, the experimentally obtained threshold current density is separated into a component due to recombination in the active layer and an additional component responsible for an increased temperature dependence at higher temperature. For the additional component, a thermal activation energy of 0.27 eV is found. It is argued that this value is too low for a simple explanation based on carrier leakage. |
| doi_str_mv | 10.1063/1.103891 |
| format | Article |
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H</creatorcontrib><creatorcontrib>VALSTER, A</creatorcontrib><creatorcontrib>BOERMANS, M. J. B</creatorcontrib><creatorcontrib>VAN DER HEYDEN, J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HAGEN, S. H</au><au>VALSTER, A</au><au>BOERMANS, M. J. B</au><au>VAN DER HEYDEN, J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double-heterostructure lasers</atitle><jtitle>Applied physics letters</jtitle><date>1990-11-26</date><risdate>1990</risdate><volume>57</volume><issue>22</issue><spage>2291</spage><epage>2293</epage><pages>2291-2293</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The temperature dependence of the threshold current density of GaInP/AlGaInP double-heterostructure lasers is investigated over a wide temperature range. Using a theoretical calculation of the temperature dependence of the recombination rate in the active layer, the experimentally obtained threshold current density is separated into a component due to recombination in the active layer and an additional component responsible for an increased temperature dependence at higher temperature. For the additional component, a thermal activation energy of 0.27 eV is found. It is argued that this value is too low for a simple explanation based on carrier leakage.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.103891</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1990-11, Vol.57 (22), p.2291-2293 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_103891 |
| source | AIP Digital Archive |
| subjects | Exact sciences and technology Metrology, measurements and laboratory procedures Physics |
| title | Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double-heterostructure lasers |
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