Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon
We report a study of the saturated light-induced defect density Ns,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=64...
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| Veröffentlicht in: | Applied physics letters 1990-10, Vol.57 (14), p.1440-1442 |
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| container_title | Applied physics letters |
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| creator | PARK, H. R LIU, J. Z CABARROCAS, P. R MARUYAMA, A ISOMURA, M WAGNER, S ABELSON, J. R FINGER, F |
| description | We report a study of the saturated light-induced defect density Ns,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). Ns,sat is determined by the constant photocurrent method and lies between 5×1016 and 2×1017 cm−3. Ns,sat drops with decreasing optical gap Eopt and hydrogen content cH, but is not correlated with the initial defect density Ns,ann or with the Urbach tail energy Eu. We discuss our results within the framework of existing models for light-induced defects. |
| doi_str_mv | 10.1063/1.103364 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_103364</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4623599</sourcerecordid><originalsourceid>FETCH-LOGICAL-c322t-bba17756679a736986a9ad5f91deae620d36f4172b5e4daa124910cb622742fb3</originalsourceid><addsrcrecordid>eNo9kM1KxDAYRYMoOI6Cj9CFCzfV_LTJZCn-w4AbXZevyZdppJOUJLOYt7fjiKvDhcvhcgm5ZvSOUSnu2QwhZHNCFowqVQvGVqdkQSkVtdQtOycXOX_PseVCLEh5wgmDxWCwiq4qA1YZyi5BQVuNfjOU2ge7M3Oy6NCUGSH7sq9iqLZgUswmTt5UU4oTpuIxHzzD3qa4wfCrgW1M0xB3ucp-9CaGS3LmYMx49ccl-Xp5_nx8q9cfr--PD-vaCM5L3ffAlGqlVBqUkHolQYNtnWYWASWnVkjXMMX7FhsLwHijGTW95Fw13PViSW6P3sPMnNB1U_JbSPuO0e7wVse641tz9eZYnSAbGF2CYHz-7zeSi1Zr8QOO-Ws5</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon</title><source>AIP Digital Archive</source><creator>PARK, H. R ; LIU, J. Z ; CABARROCAS, P. R ; MARUYAMA, A ; ISOMURA, M ; WAGNER, S ; ABELSON, J. R ; FINGER, F</creator><creatorcontrib>PARK, H. R ; LIU, J. Z ; CABARROCAS, P. R ; MARUYAMA, A ; ISOMURA, M ; WAGNER, S ; ABELSON, J. R ; FINGER, F</creatorcontrib><description>We report a study of the saturated light-induced defect density Ns,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). Ns,sat is determined by the constant photocurrent method and lies between 5×1016 and 2×1017 cm−3. Ns,sat drops with decreasing optical gap Eopt and hydrogen content cH, but is not correlated with the initial defect density Ns,ann or with the Urbach tail energy Eu. We discuss our results within the framework of existing models for light-induced defects.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.103364</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron density of states and band structure of crystalline solids ; Electron states ; Exact sciences and technology ; Physics</subject><ispartof>Applied physics letters, 1990-10, Vol.57 (14), p.1440-1442</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c322t-bba17756679a736986a9ad5f91deae620d36f4172b5e4daa124910cb622742fb3</citedby><cites>FETCH-LOGICAL-c322t-bba17756679a736986a9ad5f91deae620d36f4172b5e4daa124910cb622742fb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4623599$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>PARK, H. R</creatorcontrib><creatorcontrib>LIU, J. Z</creatorcontrib><creatorcontrib>CABARROCAS, P. R</creatorcontrib><creatorcontrib>MARUYAMA, A</creatorcontrib><creatorcontrib>ISOMURA, M</creatorcontrib><creatorcontrib>WAGNER, S</creatorcontrib><creatorcontrib>ABELSON, J. R</creatorcontrib><creatorcontrib>FINGER, F</creatorcontrib><title>Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon</title><title>Applied physics letters</title><description>We report a study of the saturated light-induced defect density Ns,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). Ns,sat is determined by the constant photocurrent method and lies between 5×1016 and 2×1017 cm−3. Ns,sat drops with decreasing optical gap Eopt and hydrogen content cH, but is not correlated with the initial defect density Ns,ann or with the Urbach tail energy Eu. We discuss our results within the framework of existing models for light-induced defects.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron density of states and band structure of crystalline solids</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNo9kM1KxDAYRYMoOI6Cj9CFCzfV_LTJZCn-w4AbXZevyZdppJOUJLOYt7fjiKvDhcvhcgm5ZvSOUSnu2QwhZHNCFowqVQvGVqdkQSkVtdQtOycXOX_PseVCLEh5wgmDxWCwiq4qA1YZyi5BQVuNfjOU2ge7M3Oy6NCUGSH7sq9iqLZgUswmTt5UU4oTpuIxHzzD3qa4wfCrgW1M0xB3ucp-9CaGS3LmYMx49ccl-Xp5_nx8q9cfr--PD-vaCM5L3ffAlGqlVBqUkHolQYNtnWYWASWnVkjXMMX7FhsLwHijGTW95Fw13PViSW6P3sPMnNB1U_JbSPuO0e7wVse641tz9eZYnSAbGF2CYHz-7zeSi1Zr8QOO-Ws5</recordid><startdate>19901001</startdate><enddate>19901001</enddate><creator>PARK, H. R</creator><creator>LIU, J. Z</creator><creator>CABARROCAS, P. R</creator><creator>MARUYAMA, A</creator><creator>ISOMURA, M</creator><creator>WAGNER, S</creator><creator>ABELSON, J. R</creator><creator>FINGER, F</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19901001</creationdate><title>Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon</title><author>PARK, H. R ; LIU, J. Z ; CABARROCAS, P. R ; MARUYAMA, A ; ISOMURA, M ; WAGNER, S ; ABELSON, J. R ; FINGER, F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-bba17756679a736986a9ad5f91deae620d36f4172b5e4daa124910cb622742fb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron density of states and band structure of crystalline solids</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>PARK, H. R</creatorcontrib><creatorcontrib>LIU, J. Z</creatorcontrib><creatorcontrib>CABARROCAS, P. R</creatorcontrib><creatorcontrib>MARUYAMA, A</creatorcontrib><creatorcontrib>ISOMURA, M</creatorcontrib><creatorcontrib>WAGNER, S</creatorcontrib><creatorcontrib>ABELSON, J. R</creatorcontrib><creatorcontrib>FINGER, F</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PARK, H. R</au><au>LIU, J. Z</au><au>CABARROCAS, P. R</au><au>MARUYAMA, A</au><au>ISOMURA, M</au><au>WAGNER, S</au><au>ABELSON, J. R</au><au>FINGER, F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon</atitle><jtitle>Applied physics letters</jtitle><date>1990-10-01</date><risdate>1990</risdate><volume>57</volume><issue>14</issue><spage>1440</spage><epage>1442</epage><pages>1440-1442</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report a study of the saturated light-induced defect density Ns,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a-Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). Ns,sat is determined by the constant photocurrent method and lies between 5×1016 and 2×1017 cm−3. Ns,sat drops with decreasing optical gap Eopt and hydrogen content cH, but is not correlated with the initial defect density Ns,ann or with the Urbach tail energy Eu. We discuss our results within the framework of existing models for light-induced defects.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.103364</doi><tpages>3</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron density of states and band structure of crystalline solids Electron states Exact sciences and technology Physics |
| title | Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T22%3A38%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dependence%20of%20the%20saturated%20light-induced%20defect%20density%20on%20macroscopic%20properties%20of%20hydrogenated%20amorphous%20silicon&rft.jtitle=Applied%20physics%20letters&rft.au=PARK,%20H.%20R&rft.date=1990-10-01&rft.volume=57&rft.issue=14&rft.spage=1440&rft.epage=1442&rft.pages=1440-1442&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.103364&rft_dat=%3Cpascalfrancis_cross%3E4623599%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |