Determination of donor and acceptor densities in high-purity GaAs from photoluminescence analysis
We report a new analysis technique to determine the acceptor density NA and the donor density ND in high-purity GaAs from 10 K photoluminescence (PL) measurements. For both n-type and p-type samples, we find that NA/ND is related to the excitonic intensity ratio rx=I(A0,X)/I(D0,X) by NA/ND=0.89rx−0....
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| Veröffentlicht in: | Applied physics letters 1990-01, Vol.56 (2), p.177-179 |
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| container_end_page | 179 |
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| container_issue | 2 |
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| container_title | Applied physics letters |
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| creator | LU, Z. H HANNA, M. C SZMYD, D. M OH, E. G MAJERFELD, A |
| description | We report a new analysis technique to determine the acceptor density NA and the donor density ND in high-purity GaAs from 10 K photoluminescence (PL) measurements. For both n-type and p-type samples, we find that NA/ND is related to the excitonic intensity ratio rx=I(A0,X)/I(D0,X) by NA/ND=0.89rx−0.06. In addition, NA can be determined from NA=1014IA, where IA is the emission intensity of the donor-acceptor pair transition normalized to the intensity of the unresolved exciton peak. Therefore, for n-type and p-type material with an impurity density 1013–1016 cm−3, NA and ND can be determined solely from a 10 K PL measurement. The advantage of this technique lies in its nondestructive nature and its applicability to situations where Hall measurements are not possible or suitable. |
| doi_str_mv | 10.1063/1.103021 |
| format | Article |
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H ; HANNA, M. C ; SZMYD, D. M ; OH, E. G ; MAJERFELD, A</creator><creatorcontrib>LU, Z. H ; HANNA, M. C ; SZMYD, D. M ; OH, E. G ; MAJERFELD, A</creatorcontrib><description>We report a new analysis technique to determine the acceptor density NA and the donor density ND in high-purity GaAs from 10 K photoluminescence (PL) measurements. For both n-type and p-type samples, we find that NA/ND is related to the excitonic intensity ratio rx=I(A0,X)/I(D0,X) by NA/ND=0.89rx−0.06. In addition, NA can be determined from NA=1014IA, where IA is the emission intensity of the donor-acceptor pair transition normalized to the intensity of the unresolved exciton peak. Therefore, for n-type and p-type material with an impurity density 1013–1016 cm−3, NA and ND can be determined solely from a 10 K PL measurement. The advantage of this technique lies in its nondestructive nature and its applicability to situations where Hall measurements are not possible or suitable.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.103021</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoluminescence ; Physics</subject><ispartof>Applied physics letters, 1990-01, Vol.56 (2), p.177-179</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-ba3abc53a5537f44113e6548462b63e2b77fcb2e8b27045aa3f49624863c98d73</citedby><cites>FETCH-LOGICAL-c320t-ba3abc53a5537f44113e6548462b63e2b77fcb2e8b27045aa3f49624863c98d73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6718052$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LU, Z. 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The advantage of this technique lies in its nondestructive nature and its applicability to situations where Hall measurements are not possible or suitable.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoluminescence</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNo9kMFKAzEURYMoWKvgJ2Thws1okpdJpstSbRUKbnQ9vMkkNjJNhiRd9O-dUnF1uXA4i0PIPWdPnCl45tMAE_yCzDjTugLOm0syY4xBpRY1vyY3Of9MtxYAM4Ivtti09wGLj4FGR_sYYqIYeorG2LFMp7ch--Jtpj7Qnf_eVeMh-XKkG1xm6lLc03EXSxwOk8hmY4OxkwGHY_b5llw5HLK9-9s5-Vq_fq7equ3H5n213FYGBCtVh4CdqQHrGrSTknOwqpaNVKJTYEWntTOdsE0nNJM1Iji5UEI2Csyi6TXMyePZa1LMOVnXjsnvMR1bztpTmpa35zQT-nBGR8wGB5cwGJ__eaV5c8rzCxtpYzI</recordid><startdate>19900108</startdate><enddate>19900108</enddate><creator>LU, Z. 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G ; MAJERFELD, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-ba3abc53a5537f44113e6548462b63e2b77fcb2e8b27045aa3f49624863c98d73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Photoluminescence</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LU, Z. H</creatorcontrib><creatorcontrib>HANNA, M. C</creatorcontrib><creatorcontrib>SZMYD, D. M</creatorcontrib><creatorcontrib>OH, E. G</creatorcontrib><creatorcontrib>MAJERFELD, A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LU, Z. H</au><au>HANNA, M. C</au><au>SZMYD, D. M</au><au>OH, E. G</au><au>MAJERFELD, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of donor and acceptor densities in high-purity GaAs from photoluminescence analysis</atitle><jtitle>Applied physics letters</jtitle><date>1990-01-08</date><risdate>1990</risdate><volume>56</volume><issue>2</issue><spage>177</spage><epage>179</epage><pages>177-179</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report a new analysis technique to determine the acceptor density NA and the donor density ND in high-purity GaAs from 10 K photoluminescence (PL) measurements. For both n-type and p-type samples, we find that NA/ND is related to the excitonic intensity ratio rx=I(A0,X)/I(D0,X) by NA/ND=0.89rx−0.06. In addition, NA can be determined from NA=1014IA, where IA is the emission intensity of the donor-acceptor pair transition normalized to the intensity of the unresolved exciton peak. Therefore, for n-type and p-type material with an impurity density 1013–1016 cm−3, NA and ND can be determined solely from a 10 K PL measurement. The advantage of this technique lies in its nondestructive nature and its applicability to situations where Hall measurements are not possible or suitable.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.103021</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1990-01, Vol.56 (2), p.177-179 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_103021 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics |
| title | Determination of donor and acceptor densities in high-purity GaAs from photoluminescence analysis |
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