Evidence for the existence of a negatively charged hydrogen species in plasma-treated n-type Si
We demonstrate the drift of a donor-passivating hydrogen species under the action of the electric field in the depletion region of a reverse-biased Au/n-Si Schottky diode hydrogenated by exposure to a low-frequency discharge. The redistribution is explained by the unidirectional drift of a negativel...
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Veröffentlicht in: | Applied physics letters 1990-03, Vol.56 (10), p.949-951 |
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creator | TAVENDALE, A. J PEARTON, S. J WILLIAMS, A. A |
description | We demonstrate the drift of a donor-passivating hydrogen species under the action of the electric field in the depletion region of a reverse-biased Au/n-Si Schottky diode hydrogenated by exposure to a low-frequency discharge. The redistribution is explained by the unidirectional drift of a negatively charged passivating species and is confirmed by secondary-ion mass spectrometry profiling in deuterated diodes. The results are consistent with the presence of an acceptor level for hydrogen in n-type Si, and are analogous to the situation in p-type Si where drift experiments reveal the existence of positively charged hydrogen donor species. |
doi_str_mv | 10.1063/1.102633 |
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The results are consistent with the presence of an acceptor level for hydrogen in n-type Si, and are analogous to the situation in p-type Si where drift experiments reveal the existence of positively charged hydrogen donor species.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.102633</doi><tpages>3</tpages></addata></record> |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics |
title | Evidence for the existence of a negatively charged hydrogen species in plasma-treated n-type Si |
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