Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics
Sequential surface reactions of trimethylaluminum and water vapor have been used to deposit Al2O3 on Si(100) surfaces. The self-limiting nature of the surface reactions allows precise control of the thickness of the deposited layers and gives rise to films with highly conformal step coverage. High q...
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| Veröffentlicht in: | Applied physics letters 1989-11, Vol.55 (19), p.1963-1965 |
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| Format: | Artikel |
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| container_end_page | 1965 |
|---|---|
| container_issue | 19 |
| container_start_page | 1963 |
| container_title | Applied physics letters |
| container_volume | 55 |
| creator | HIGASHI, G. S FLEMING, C. G |
| description | Sequential surface reactions of trimethylaluminum and water vapor have been used to deposit Al2O3 on Si(100) surfaces. The self-limiting nature of the surface reactions allows precise control of the thickness of the deposited layers and gives rise to films with highly conformal step coverage. High quality dielectrics have been deposited at temperatures as low as 100 °C. Resistivities of 1017 Ω cm, breakdown strengths of 8×106 V/cm, and interface-state densities of 1011 states/eV cm2 have already been achieved and they suggest possible applications as a gate insulator or a dielectric passivation layer. |
| doi_str_mv | 10.1063/1.102337 |
| format | Article |
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Resistivities of 1017 Ω cm, breakdown strengths of 8×106 V/cm, and interface-state densities of 1011 states/eV cm2 have already been achieved and they suggest possible applications as a gate insulator or a dielectric passivation layer.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.102337</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Applied physics letters, 1989-11, Vol.55 (19), p.1963-1965</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c253t-3f5534778afd87eacece5bcd638b7093951864ac606d075165ce9cbba47d203</citedby><cites>FETCH-LOGICAL-c253t-3f5534778afd87eacece5bcd638b7093951864ac606d075165ce9cbba47d203</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,782,786,27931,27932</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19735258$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HIGASHI, G. S</creatorcontrib><creatorcontrib>FLEMING, C. G</creatorcontrib><title>Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics</title><title>Applied physics letters</title><description>Sequential surface reactions of trimethylaluminum and water vapor have been used to deposit Al2O3 on Si(100) surfaces. The self-limiting nature of the surface reactions allows precise control of the thickness of the deposited layers and gives rise to films with highly conformal step coverage. High quality dielectrics have been deposited at temperatures as low as 100 °C. 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G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HIGASHI, G. S</au><au>FLEMING, C. G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics</atitle><jtitle>Applied physics letters</jtitle><date>1989-11-06</date><risdate>1989</risdate><volume>55</volume><issue>19</issue><spage>1963</spage><epage>1965</epage><pages>1963-1965</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Sequential surface reactions of trimethylaluminum and water vapor have been used to deposit Al2O3 on Si(100) surfaces. The self-limiting nature of the surface reactions allows precise control of the thickness of the deposited layers and gives rise to films with highly conformal step coverage. High quality dielectrics have been deposited at temperatures as low as 100 °C. Resistivities of 1017 Ω cm, breakdown strengths of 8×106 V/cm, and interface-state densities of 1011 states/eV cm2 have already been achieved and they suggest possible applications as a gate insulator or a dielectric passivation layer.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.102337</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1989-11, Vol.55 (19), p.1963-1965 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_102337 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics |
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