Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe

We report the successful growth of ZnTe on nearly lattice-matched III-V buffer layers of InAs (0.75%), GaSb (0.15%), and on GaAs and ZnTe by molecular beam epitaxy. In situ reflection high-energy electron diffraction measurements showed the characteristic streak patterns indicative of two-dimensiona...

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Veröffentlicht in:	Applied physics letters 1989-09, Vol.55 (12), p.1217-1219
Hauptverfasser:	RAJAKARUNANAYAKE, Y, COLE, B. H, MCCALDIN, J. O, CHOW, D. H, SODERSTROM, J. R, MCGILL, T. C, JONES, C. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
Online-Zugang:	Volltext
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