Effect of SiO2 surface chemistry on the oxidation of silicon

We show that the retardation in the silicon oxidation rate associated with an ammonium hydroxide-hydrogen peroxide preclean is due to trace amounts of aluminum in the region of the SiO2 surface. This aluminum and the retarding effect can be eliminated by removing less than 50 Å of thermal oxide in a...

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Veröffentlicht in:	Applied physics letters 1989-02, Vol.54 (8), p.715-717
Hauptverfasser:	DELARIOS, J. M, KAO, D. B, HELMS, C. R, DEAL, B. E
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Mechanical and acoustical properties adhesion Physics Solid surfaces and solid-solid interfaces Solid-fluid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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