Dislocation nucleation and propagation in Si0.95Ge0.05 layers on silicon

Defect reveal etching has been used to study the onset of relaxation in strained Si0.95 Ge0.05 layers grown by molecular beam epitaxy on (001) silicon substrates. Etch features corresponding to nucleation centers and to interfacial and threading segments of mismatch dislocations have been observed a...

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Veröffentlicht in:	Applied physics letters 1989-01, Vol.54 (2), p.148-150
Hauptverfasser:	GIBBINGS, C. J, TUPPEN, C. G, HOCKLY, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, epr, nmr, etc.) Physics Structure of solids and liquids crystallography
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