Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers ha...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1989-06, Vol.54 (25), p.2527-2529
Hauptverfasser:	OFFSEY, S. D, SCHAFF, W. J, TASKER, P. J, ENNEN, H, EASTMAN, L. F
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CURRENT DENSITY DATA ENGINEERING EPITAXY Exact sciences and technology EXPERIMENTAL DATA FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS HETEROJUNCTIONS INDIUM ARSENIDES INDIUM COMPOUNDS INFORMATION JUNCTIONS LASER CAVITIES LASERS LAYERS MEDIUM TEMPERATURE MOLECULAR BEAM EPITAXY NUMERICAL DATA OPERATION Optics Physics PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS 420300 > Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes VAPOR PHASE EPITAXY
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