Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers ha...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1989-06, Vol.54 (25), p.2527-2529
Hauptverfasser: OFFSEY, S. D, SCHAFF, W. J, TASKER, P. J, ENNEN, H, EASTMAN, L. F
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container_issue 25
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container_title Appl. Phys. Lett.; (United States)
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creator OFFSEY, S. D
SCHAFF, W. J
TASKER, P. J
ENNEN, H
EASTMAN, L. F
description Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers have threshold currents of 12 mA for 3 μm×400 μm devices and average threshold current densities of 174 A/cm2 for 40 μm×800 μm devices. Studies of threshold current versus cavity length and width are compared with theoretical formulations. The threshold currents for lasers of various lengths and widths are significantly lower than those for previous strained-layer lasers grown by molecular beam epitaxy and lower than those for strained-layer lasers grown by organometallic vapor phase epitaxy.
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D</creatorcontrib><creatorcontrib>SCHAFF, W. J</creatorcontrib><creatorcontrib>TASKER, P. J</creatorcontrib><creatorcontrib>ENNEN, H</creatorcontrib><creatorcontrib>EASTMAN, L. F</creatorcontrib><creatorcontrib>Department of Electrical Engineering and National Nanofabrication Facility, Cornell University, Ithaca, New York 14853(US)</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>OFFSEY, S. D</au><au>SCHAFF, W. J</au><au>TASKER, P. J</au><au>ENNEN, H</au><au>EASTMAN, L. F</au><aucorp>Department of Electrical Engineering and National Nanofabrication Facility, Cornell University, Ithaca, New York 14853(US)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1989-06-19</date><risdate>1989</risdate><volume>54</volume><issue>25</issue><spage>2527</spage><epage>2529</epage><pages>2527-2529</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers have threshold currents of 12 mA for 3 μm×400 μm devices and average threshold current densities of 174 A/cm2 for 40 μm×800 μm devices. Studies of threshold current versus cavity length and width are compared with theoretical formulations. The threshold currents for lasers of various lengths and widths are significantly lower than those for previous strained-layer lasers grown by molecular beam epitaxy and lower than those for strained-layer lasers grown by organometallic vapor phase epitaxy.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.101083</doi><tpages>3</tpages></addata></record>
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1077-3118
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source AIP_美国物理联合会期刊回溯(NSTL购买)
subjects ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
DATA
ENGINEERING
EPITAXY
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
Fundamental areas of phenomenology (including applications)
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASER CAVITIES
LASERS
LAYERS
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
Optics
Physics
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989)
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
VAPOR PHASE EPITAXY
title Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy
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