Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy
Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers ha...
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Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1989-06, Vol.54 (25), p.2527-2529 |
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container_title | Appl. Phys. Lett.; (United States) |
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creator | OFFSEY, S. D SCHAFF, W. J TASKER, P. J ENNEN, H EASTMAN, L. F |
description | Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers have threshold currents of 12 mA for 3 μm×400 μm devices and average threshold current densities of 174 A/cm2 for 40 μm×800 μm devices. Studies of threshold current versus cavity length and width are compared with theoretical formulations. The threshold currents for lasers of various lengths and widths are significantly lower than those for previous strained-layer lasers grown by molecular beam epitaxy and lower than those for strained-layer lasers grown by organometallic vapor phase epitaxy. |
doi_str_mv | 10.1063/1.101083 |
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D ; SCHAFF, W. J ; TASKER, P. J ; ENNEN, H ; EASTMAN, L. F</creator><creatorcontrib>OFFSEY, S. D ; SCHAFF, W. J ; TASKER, P. J ; ENNEN, H ; EASTMAN, L. F ; Department of Electrical Engineering and National Nanofabrication Facility, Cornell University, Ithaca, New York 14853(US)</creatorcontrib><description>Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers have threshold currents of 12 mA for 3 μm×400 μm devices and average threshold current densities of 174 A/cm2 for 40 μm×800 μm devices. Studies of threshold current versus cavity length and width are compared with theoretical formulations. The threshold currents for lasers of various lengths and widths are significantly lower than those for previous strained-layer lasers grown by molecular beam epitaxy and lower than those for strained-layer lasers grown by organometallic vapor phase epitaxy.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.101083</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>ALUMINIUM ARSENIDES ; ALUMINIUM COMPOUNDS ; ARSENIC COMPOUNDS ; ARSENIDES ; CURRENT DENSITY ; DATA ; ENGINEERING ; EPITAXY ; Exact sciences and technology ; EXPERIMENTAL DATA ; FABRICATION ; Fundamental areas of phenomenology (including applications) ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; HETEROJUNCTIONS ; INDIUM ARSENIDES ; INDIUM COMPOUNDS ; INFORMATION ; JUNCTIONS ; LASER CAVITIES ; LASERS ; LAYERS ; MEDIUM TEMPERATURE ; MOLECULAR BEAM EPITAXY ; NUMERICAL DATA ; OPERATION ; Optics ; Physics ; PNICTIDES ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989) ; SEMICONDUCTOR LASERS ; Semiconductor lasers; laser diodes ; VAPOR PHASE EPITAXY</subject><ispartof>Appl. Phys. Lett.; (United States), 1989-06, Vol.54 (25), p.2527-2529</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-1c0ab30ffda636ec9256bfb461a2b6717bb68c505004b7e5e9a2b14dbb0883633</citedby><cites>FETCH-LOGICAL-c350t-1c0ab30ffda636ec9256bfb461a2b6717bb68c505004b7e5e9a2b14dbb0883633</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19702195$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/6252719$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>OFFSEY, S. D</creatorcontrib><creatorcontrib>SCHAFF, W. J</creatorcontrib><creatorcontrib>TASKER, P. J</creatorcontrib><creatorcontrib>ENNEN, H</creatorcontrib><creatorcontrib>EASTMAN, L. F</creatorcontrib><creatorcontrib>Department of Electrical Engineering and National Nanofabrication Facility, Cornell University, Ithaca, New York 14853(US)</creatorcontrib><title>Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy</title><title>Appl. Phys. Lett.; (United States)</title><description>Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers have threshold currents of 12 mA for 3 μm×400 μm devices and average threshold current densities of 174 A/cm2 for 40 μm×800 μm devices. Studies of threshold current versus cavity length and width are compared with theoretical formulations. The threshold currents for lasers of various lengths and widths are significantly lower than those for previous strained-layer lasers grown by molecular beam epitaxy and lower than those for strained-layer lasers grown by organometallic vapor phase epitaxy.</description><subject>ALUMINIUM ARSENIDES</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>CURRENT DENSITY</subject><subject>DATA</subject><subject>ENGINEERING</subject><subject>EPITAXY</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>FABRICATION</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>HETEROJUNCTIONS</subject><subject>INDIUM ARSENIDES</subject><subject>INDIUM COMPOUNDS</subject><subject>INFORMATION</subject><subject>JUNCTIONS</subject><subject>LASER CAVITIES</subject><subject>LASERS</subject><subject>LAYERS</subject><subject>MEDIUM TEMPERATURE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NUMERICAL DATA</subject><subject>OPERATION</subject><subject>Optics</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989)</subject><subject>SEMICONDUCTOR LASERS</subject><subject>Semiconductor lasers; laser diodes</subject><subject>VAPOR PHASE EPITAXY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNpFkMFKAzEQhoMoWKvgIwRB8LKabJrs7rEUrQXBg3peJtnZdiWb1iRL25fwmU2t4GV-Zuabn5kh5Jqze86UeOBJOCvFCRlxVhSZ4Lw8JSPGmMhUJfk5uQjhM6UyF2JEvt-ih85hk1nYo6cLN4dpyH7D1B6ELj00qd-5Bnc04AY8RKRm7do016OLdIUR_TpEP5g4eKShc0uL9GsAF4eebtFaaiGgP5itt47qPe3XFs1gwVON0FPcdBF2-0ty1oINePWnY_Lx9Pg-e85eXueL2fQlM0KymHHDQAvWtg0oodBUuVS61RPFIdeq4IXWqjSSScYmukCJVarzSaM1K0uhhBiTm6Nv2rqrg-kimlU6yaGJtcplXvAqQXdHyKTjgse23viuB7-vOasPz655fXx2Qm-P6AaCAdt6cKYL_3xVsJxXUvwAVgGAaw</recordid><startdate>19890619</startdate><enddate>19890619</enddate><creator>OFFSEY, S. D</creator><creator>SCHAFF, W. J</creator><creator>TASKER, P. J</creator><creator>ENNEN, H</creator><creator>EASTMAN, L. F</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19890619</creationdate><title>Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy</title><author>OFFSEY, S. D ; SCHAFF, W. J ; TASKER, P. J ; ENNEN, H ; EASTMAN, L. F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-1c0ab30ffda636ec9256bfb461a2b6717bb68c505004b7e5e9a2b14dbb0883633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>ALUMINIUM ARSENIDES</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>CURRENT DENSITY</topic><topic>DATA</topic><topic>ENGINEERING</topic><topic>EPITAXY</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>FABRICATION</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>HETEROJUNCTIONS</topic><topic>INDIUM ARSENIDES</topic><topic>INDIUM COMPOUNDS</topic><topic>INFORMATION</topic><topic>JUNCTIONS</topic><topic>LASER CAVITIES</topic><topic>LASERS</topic><topic>LAYERS</topic><topic>MEDIUM TEMPERATURE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>NUMERICAL DATA</topic><topic>OPERATION</topic><topic>Optics</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989)</topic><topic>SEMICONDUCTOR LASERS</topic><topic>Semiconductor lasers; laser diodes</topic><topic>VAPOR PHASE EPITAXY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>OFFSEY, S. D</creatorcontrib><creatorcontrib>SCHAFF, W. J</creatorcontrib><creatorcontrib>TASKER, P. J</creatorcontrib><creatorcontrib>ENNEN, H</creatorcontrib><creatorcontrib>EASTMAN, L. F</creatorcontrib><creatorcontrib>Department of Electrical Engineering and National Nanofabrication Facility, Cornell University, Ithaca, New York 14853(US)</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>OFFSEY, S. D</au><au>SCHAFF, W. J</au><au>TASKER, P. J</au><au>ENNEN, H</au><au>EASTMAN, L. F</au><aucorp>Department of Electrical Engineering and National Nanofabrication Facility, Cornell University, Ithaca, New York 14853(US)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1989-06-19</date><risdate>1989</risdate><volume>54</volume><issue>25</issue><spage>2527</spage><epage>2529</epage><pages>2527-2529</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers have threshold currents of 12 mA for 3 μm×400 μm devices and average threshold current densities of 174 A/cm2 for 40 μm×800 μm devices. Studies of threshold current versus cavity length and width are compared with theoretical formulations. The threshold currents for lasers of various lengths and widths are significantly lower than those for previous strained-layer lasers grown by molecular beam epitaxy and lower than those for strained-layer lasers grown by organometallic vapor phase epitaxy.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.101083</doi><tpages>3</tpages></addata></record> |
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source | AIP_美国物理联合会期刊回溯(NSTL购买) |
subjects | ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CURRENT DENSITY DATA ENGINEERING EPITAXY Exact sciences and technology EXPERIMENTAL DATA FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS HETEROJUNCTIONS INDIUM ARSENIDES INDIUM COMPOUNDS INFORMATION JUNCTIONS LASER CAVITIES LASERS LAYERS MEDIUM TEMPERATURE MOLECULAR BEAM EPITAXY NUMERICAL DATA OPERATION Optics Physics PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes VAPOR PHASE EPITAXY |
title | Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy |
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