Gating of germanium surfaces using pseudomorphic silicon interlayers

A novel insulator structure for gating of germanium surfaces has been developed. The structure consists of a very thin (on the order of 10 Å) pseudomorphic silicon layer deposited on the germanium surface prior to deposition of a silicon dioxide insulating layer. Both the silicon and silicon dioxide...

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Veröffentlicht in:	Applied physics letters 1988-08, Vol.53 (8), p.692-694
Hauptverfasser:	VITKAVAGE, D. J, FOUNTAIN, G. G, RUDDER, R. A, HATTANGADY, S. V, MARKUNAS, R. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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