Electron diffusion length in rapid thermal processed p-type silicon

Electron diffusion length in p-type virgin silicon has been measured by the surface photovoltage method after rapid thermal processing as a function of process time duration and process temperature. The results obtained are consistent with a model involving defects acting as a single dominant recomb...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 1988-11, Vol.53 (20), p.1928-1930
Hauptverfasser:	QUAT, V. T, EICHHAMMER, W, SIFFERT, P
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!