Electron diffusion length in rapid thermal processed p-type silicon

Electron diffusion length in rapid thermal processed p-type silicon

Electron diffusion length in p-type virgin silicon has been measured by the surface photovoltage method after rapid thermal processing as a function of process time duration and process temperature. The results obtained are consistent with a model involving defects acting as a single dominant recomb...

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Veröffentlicht in:Applied physics letters 1988-11, Vol.53 (20), p.1928-1930
Hauptverfasser: QUAT, V. T, EICHHAMMER, W, SIFFERT, P
Format: Artikel
Sprache:eng
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Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Physics
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container_end_page 1930
container_issue 20
container_start_page 1928
container_title Applied physics letters
container_volume 53
creator QUAT, V. T
EICHHAMMER, W
SIFFERT, P
description Electron diffusion length in p-type virgin silicon has been measured by the surface photovoltage method after rapid thermal processing as a function of process time duration and process temperature. The results obtained are consistent with a model involving defects acting as a single dominant recombination center induced in the bulk. This recombination center is responsible for the severe degradation of the diffusion length, even at process temperatures as low as 600 °C. An activation energy of 1.48±0.28 eV is found for the center introduction rate. The work shows that the diffusion length measurement is a very sensitive tool in the study of rapid thermal process induced recombination centers in the bulk, with direct correlation to device performance.
doi_str_mv 10.1063/1.100348
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An activation energy of 1.48±0.28 eV is found for the center introduction rate. The work shows that the diffusion length measurement is a very sensitive tool in the study of rapid thermal process induced recombination centers in the bulk, with direct correlation to device performance.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.100348</doi><tpages>3</tpages></addata></record>
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1077-3118
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subjects Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Physics
title Electron diffusion length in rapid thermal processed p-type silicon
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