Thermal and electric field induced defects in InP metal-insulator-semiconductor structures

The presence of deep levels in several samples of InP metal-insulator-semiconductor (MIS) structures was studied using the deep level transient spectroscopy technique. The InP MIS structures were fabricated using three different methods of oxide formation, two of which are chemical oxides and the th...

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Veröffentlicht in:	Applied physics letters 1988-11, Vol.53 (20), p.1940-1942
Hauptverfasser:	TIN, C. C, BARNES, P. A, NEELY, W. C
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Compound structure devices Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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