Technique for selective etching of Si with respect to Ge

A technique to selectively etch silicon with respect to germanium is described. The method relies on an observed small difference in the effects of polymeric etch-inhibiting layers on the two materials. In a CF4/H2 plasma, the observed polymer point for Ge is 1–3% lower than for Si. This produces a...

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Veröffentlicht in:	Applied physics letters 1988-12, Vol.53 (23), p.2328-2329
Hauptverfasser:	BRIGHT, A. A, IYER, S. S, ROBEY, S. W, DELAGE, S. L
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Mechanical and acoustical properties adhesion Physics Solid surfaces and solid-solid interfaces Solid-fluid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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container_title	Applied physics letters
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creator	BRIGHT, A. A IYER, S. S ROBEY, S. W DELAGE, S. L
description	A technique to selectively etch silicon with respect to germanium is described. The method relies on an observed small difference in the effects of polymeric etch-inhibiting layers on the two materials. In a CF4/H2 plasma, the observed polymer point for Ge is 1–3% lower than for Si. This produces a narrow process window in which Si is etched while etching of Ge is suppressed. This technique has applications to etching of pure Si layers over Ge as well as Si-Ge alloys for device applications.
doi_str_mv	10.1063/1.100269
format	Article
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L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c254t-49b7e29fa73894835a76db376909299144d28d4db3fde87fa18e450835c993ea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Mechanical and acoustical properties; adhesion</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Solid-fluid interfaces</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BRIGHT, A. A</creatorcontrib><creatorcontrib>IYER, S. S</creatorcontrib><creatorcontrib>ROBEY, S. W</creatorcontrib><creatorcontrib>DELAGE, S. L</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BRIGHT, A. A</au><au>IYER, S. S</au><au>ROBEY, S. W</au><au>DELAGE, S. L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Technique for selective etching of Si with respect to Ge</atitle><jtitle>Applied physics letters</jtitle><date>1988-12-05</date><risdate>1988</risdate><volume>53</volume><issue>23</issue><spage>2328</spage><epage>2329</epage><pages>2328-2329</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A technique to selectively etch silicon with respect to germanium is described. The method relies on an observed small difference in the effects of polymeric etch-inhibiting layers on the two materials. In a CF4/H2 plasma, the observed polymer point for Ge is 1–3% lower than for Si. This produces a narrow process window in which Si is etched while etching of Ge is suppressed. This technique has applications to etching of pure Si layers over Ge as well as Si-Ge alloys for device applications.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.100269</doi><tpages>2</tpages></addata></record>
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subjects	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Mechanical and acoustical properties adhesion Physics Solid surfaces and solid-solid interfaces Solid-fluid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
title	Technique for selective etching of Si with respect to Ge
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