Defect reduction effects in GaAs on Si substrates by thermal annealing
High quality GaAs films with dislocation densities of 2–3×106 cm−2 on (100) Si substrates have been obtained by thermal cycle growth using the metalorganic chemical vapor deposition method. Significant reduction effects of dislocation density in the GaAs layers on Si have been analyzed by a simple m...
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| Veröffentlicht in: | Applied physics letters 1988-12, Vol.53 (23), p.2293-2295 |
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| container_issue | 23 |
| container_start_page | 2293 |
| container_title | Applied physics letters |
| container_volume | 53 |
| creator | YAMAGUCHI, M YAMAMOTO, A TACHIKAWA, M ITOH, Y SUGO, M |
| description | High quality GaAs films with dislocation densities of 2–3×106 cm−2 on (100) Si substrates have been obtained by thermal cycle growth using the metalorganic chemical vapor deposition method. Significant reduction effects of dislocation density in the GaAs layers on Si have been analyzed by a simple model, in which annihilation and coalescence of dislocations are assumed to be caused by dislocation movement under thermal stress. Relaxation of thermal stress in the GaAs films on Si during thermal annealing has also been observed. |
| doi_str_mv | 10.1063/1.100257 |
| format | Article |
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Significant reduction effects of dislocation density in the GaAs layers on Si have been analyzed by a simple model, in which annihilation and coalescence of dislocations are assumed to be caused by dislocation movement under thermal stress. Relaxation of thermal stress in the GaAs films on Si during thermal annealing has also been observed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.100257</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Applied physics letters, 1988-12, Vol.53 (23), p.2293-2295</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c322t-a0b7676b0efbc9bbd4f85e41915c0f7db2c4b5c30fe47c417de3cd58422d56783</citedby><cites>FETCH-LOGICAL-c322t-a0b7676b0efbc9bbd4f85e41915c0f7db2c4b5c30fe47c417de3cd58422d56783</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6595664$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>YAMAGUCHI, M</creatorcontrib><creatorcontrib>YAMAMOTO, A</creatorcontrib><creatorcontrib>TACHIKAWA, M</creatorcontrib><creatorcontrib>ITOH, Y</creatorcontrib><creatorcontrib>SUGO, M</creatorcontrib><title>Defect reduction effects in GaAs on Si substrates by thermal annealing</title><title>Applied physics letters</title><description>High quality GaAs films with dislocation densities of 2–3×106 cm−2 on (100) Si substrates have been obtained by thermal cycle growth using the metalorganic chemical vapor deposition method. Significant reduction effects of dislocation density in the GaAs layers on Si have been analyzed by a simple model, in which annihilation and coalescence of dislocations are assumed to be caused by dislocation movement under thermal stress. Relaxation of thermal stress in the GaAs films on Si during thermal annealing has also been observed.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo9j0tLAzEYRYMoWKvgT8jChZvRvDOzLNVWoeBCXQ95fNHINC1Juui_d8qIq8u9HC4chG4peaBE8Uc6BmFSn6EZJVo3nNL2HM0IIbxRnaSX6KqUn7FKxvkMrZ4ggKs4gz-4GncJQzgNBceE12ZR8Di9R1wOttRsKhRsj7h-Q96aAZuUwAwxfV2ji2CGAjd_OUefq-eP5UuzeVu_LhebxnHGamOI1UorSyBY11nrRWglCNpR6UjQ3jInrHScBBDaCao9cOdlKxjzUumWz9H99OvyrpQMod_nuDX52FPSn_x72k_-I3o3oXtTnBlCNsnF8s8r2UmlBP8FBrNZPQ</recordid><startdate>19881205</startdate><enddate>19881205</enddate><creator>YAMAGUCHI, M</creator><creator>YAMAMOTO, A</creator><creator>TACHIKAWA, M</creator><creator>ITOH, Y</creator><creator>SUGO, M</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19881205</creationdate><title>Defect reduction effects in GaAs on Si substrates by thermal annealing</title><author>YAMAGUCHI, M ; YAMAMOTO, A ; TACHIKAWA, M ; ITOH, Y ; SUGO, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-a0b7676b0efbc9bbd4f85e41915c0f7db2c4b5c30fe47c417de3cd58422d56783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>YAMAGUCHI, M</creatorcontrib><creatorcontrib>YAMAMOTO, A</creatorcontrib><creatorcontrib>TACHIKAWA, M</creatorcontrib><creatorcontrib>ITOH, Y</creatorcontrib><creatorcontrib>SUGO, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>YAMAGUCHI, M</au><au>YAMAMOTO, A</au><au>TACHIKAWA, M</au><au>ITOH, Y</au><au>SUGO, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Defect reduction effects in GaAs on Si substrates by thermal annealing</atitle><jtitle>Applied physics letters</jtitle><date>1988-12-05</date><risdate>1988</risdate><volume>53</volume><issue>23</issue><spage>2293</spage><epage>2295</epage><pages>2293-2295</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>High quality GaAs films with dislocation densities of 2–3×106 cm−2 on (100) Si substrates have been obtained by thermal cycle growth using the metalorganic chemical vapor deposition method. Significant reduction effects of dislocation density in the GaAs layers on Si have been analyzed by a simple model, in which annihilation and coalescence of dislocations are assumed to be caused by dislocation movement under thermal stress. Relaxation of thermal stress in the GaAs films on Si during thermal annealing has also been observed.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.100257</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1988-12, Vol.53 (23), p.2293-2295 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_100257 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Defect reduction effects in GaAs on Si substrates by thermal annealing |
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