Cooperative growth phenomena in silicon/germanium low-temperature epitaxy

A series of Si:Ge alloys and structures has been prepared by ultrahigh-vacuum chemical vapor deposition. Alloys of composition 0≤Ge/Si≤0.20 are readily deposited at T=550 °C. Commensurate, defect-free strained layers are deposited up to a critical thickness, whereupon the accumulated stress in the f...

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Veröffentlicht in:	Applied physics letters 1988-12, Vol.53 (25), p.2555-2557
Hauptverfasser:	MEYERSON, B. S, URAM, K. J, LEGOUES, F. K
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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