Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of p atoms

Lateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films by a selective surface doping method of P atoms was investigated, in which P atoms were doped only in the surface layers of a-Si films. It was found that the L-SPE growth rate and the growth length from the seed region were changed by...

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Veröffentlicht in:	Applied physics letters 1988-12, Vol.53 (26), p.2626-2628
Hauptverfasser:	DAN, T, ISHIWARA, H, FURUKAWA, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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