Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of p atoms
Lateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films by a selective surface doping method of P atoms was investigated, in which P atoms were doped only in the surface layers of a-Si films. It was found that the L-SPE growth rate and the growth length from the seed region were changed by...
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| Veröffentlicht in: | Applied physics letters 1988-12, Vol.53 (26), p.2626-2628 |
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| container_title | Applied physics letters |
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| creator | DAN, T ISHIWARA, H FURUKAWA, S |
| description | Lateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films by a selective surface doping method of P atoms was investigated, in which P atoms were doped only in the surface layers of a-Si films. It was found that the L-SPE growth rate and the growth length from the seed region were changed by thickness of the P-doped layer, but they weakly depended on the thickness of the a-Si film. It was also found from cross-sectional transmission electron microscopy that the growth front of L-SPE in the surface P-doped sample was composed of a single facet. In order to explain these experimental results, a L-SPE growth model in the surface P-doped sample is proposed. |
| doi_str_mv | 10.1063/1.100179 |
| format | Article |
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It was found that the L-SPE growth rate and the growth length from the seed region were changed by thickness of the P-doped layer, but they weakly depended on the thickness of the a-Si film. It was also found from cross-sectional transmission electron microscopy that the growth front of L-SPE in the surface P-doped sample was composed of a single facet. In order to explain these experimental results, a L-SPE growth model in the surface P-doped sample is proposed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.100179</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface structure and topography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Applied physics letters, 1988-12, Vol.53 (26), p.2626-2628</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c322t-2b42a0de89188894e3e28dc4d0a7419ab33171f8d776d3405003cd58aad5fbe43</citedby><cites>FETCH-LOGICAL-c322t-2b42a0de89188894e3e28dc4d0a7419ab33171f8d776d3405003cd58aad5fbe43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6770856$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>DAN, T</creatorcontrib><creatorcontrib>ISHIWARA, H</creatorcontrib><creatorcontrib>FURUKAWA, S</creatorcontrib><title>Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of p atoms</title><title>Applied physics letters</title><description>Lateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films by a selective surface doping method of P atoms was investigated, in which P atoms were doped only in the surface layers of a-Si films. It was found that the L-SPE growth rate and the growth length from the seed region were changed by thickness of the P-doped layer, but they weakly depended on the thickness of the a-Si film. It was also found from cross-sectional transmission electron microscopy that the growth front of L-SPE in the surface P-doped sample was composed of a single facet. In order to explain these experimental results, a L-SPE growth model in the surface P-doped sample is proposed.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface structure and topography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LxDAYhIMouH6APyEHD16qSdM26VEWv2DBg3oub5M3bqTdhLxdcf-9XVY8DQPPDMwwdiXFrRSNupOzCKnbI7aQQutCSWmO2UIIoYqmreUpOyP6mm1dKrVg3QomzDBwikNwPK2BkGMKE_zsePQcxpjTOm6JvwXuwzAS73eccEA7hW_ktM0eLHIXU9h88hGndXT7YOIwxZEu2ImHgfDyT8_Zx-PD-_K5WL0-vSzvV4VVZTkVZV-VIByaVhpj2goVlsbZygnQlWyhV0pq6Y3TunGqEvU8x7raALja91ipc3Zz6LU5EmX0XcphhLzrpOj2x3SyOxwzo9cHNAFZGHyGjQ30zzdaC1M36hew42Ie</recordid><startdate>19881226</startdate><enddate>19881226</enddate><creator>DAN, T</creator><creator>ISHIWARA, H</creator><creator>FURUKAWA, S</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19881226</creationdate><title>Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of p atoms</title><author>DAN, T ; ISHIWARA, H ; FURUKAWA, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-2b42a0de89188894e3e28dc4d0a7419ab33171f8d776d3405003cd58aad5fbe43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface structure and topography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DAN, T</creatorcontrib><creatorcontrib>ISHIWARA, H</creatorcontrib><creatorcontrib>FURUKAWA, S</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DAN, T</au><au>ISHIWARA, H</au><au>FURUKAWA, S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of p atoms</atitle><jtitle>Applied physics letters</jtitle><date>1988-12-26</date><risdate>1988</risdate><volume>53</volume><issue>26</issue><spage>2626</spage><epage>2628</epage><pages>2626-2628</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Lateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films by a selective surface doping method of P atoms was investigated, in which P atoms were doped only in the surface layers of a-Si films. It was found that the L-SPE growth rate and the growth length from the seed region were changed by thickness of the P-doped layer, but they weakly depended on the thickness of the a-Si film. It was also found from cross-sectional transmission electron microscopy that the growth front of L-SPE in the surface P-doped sample was composed of a single facet. In order to explain these experimental results, a L-SPE growth model in the surface P-doped sample is proposed.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.100179</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Applied physics letters, 1988-12, Vol.53 (26), p.2626-2628 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_100179 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of p atoms |
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