Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C

Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C

We report a modulation spectroscopy experiment on GaAs and Ga0.82Al0.18As at elevated temperatures. Using the contactless electromodulation method of photoreflectance, the direct gaps (E0) of these materials have been observed from 77 K to 600 °C. The latter temperature is comparable to molecular be...

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Veröffentlicht in:Applied physics letters 1988-09, Vol.53 (12), p.1080-1082
Hauptverfasser: SHEN, H, PAN, S. H, HANG, Z, JING LENG, POLLAK, F. H, WOODALL, J. M, SACKS, R. N
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrooptical effects
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
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Zusammenfassung:We report a modulation spectroscopy experiment on GaAs and Ga0.82Al0.18As at elevated temperatures. Using the contactless electromodulation method of photoreflectance, the direct gaps (E0) of these materials have been observed from 77 K to 600 °C. The latter temperature is comparable to molecular beam expitaxy, metalorganic chemical vapor deposition, growth temperatures, etc. Our results are at the highest temperature yet reported for E0 (GaAs) in a reflectance experiment and the first observation of E0 (Ga1−xAlxAs) at elevated temperatures. From the latter, the Varshni coefficients [Physica 34, 149 (1967)] for Ga0.82Al0.18As were determined.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100027