N‐polar deep‐recess GaN MISHEMT with enhanced f t ·L G by gate dielectric thinning
The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectric. A favourable trade‐off between gate fringing capacitance and...
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| Veröffentlicht in: | Electronics letters 2024-07, Vol.60 (13) |
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| container_issue | 13 |
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| container_title | Electronics letters |
| container_volume | 60 |
| creator | Collins, Henry Akso, Emre Clymore, Christopher J. Khan, Kamruzzaman Hamwey, Robert Hatui, Nirupam Guidry, Matthew Keller, Stacia Mishra, Umesh K. |
| description | The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectric. A favourable trade‐off between gate fringing capacitance and transconductance was established, resulting in an improved current gain cutoff frequency times gate length (
f
t
·L
G
) figure of merit compared to standard Schottky‐gate and metal‐insulator‐semiconductor (MIS) HEMTs. The etched gate dielectric MISHEMT demonstrated a maximum
f
t
·L
G
of 15.0 GHz·µm for an
L
G
of 100 nm. |
| doi_str_mv | 10.1049/ell2.13272 |
| format | Article |
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f
t
·L
G
) figure of merit compared to standard Schottky‐gate and metal‐insulator‐semiconductor (MIS) HEMTs. The etched gate dielectric MISHEMT demonstrated a maximum
f
t
·L
G
of 15.0 GHz·µm for an
L
G
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f
t
·L
G
) figure of merit compared to standard Schottky‐gate and metal‐insulator‐semiconductor (MIS) HEMTs. The etched gate dielectric MISHEMT demonstrated a maximum
f
t
·L
G
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L
G
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f
t
·L
G
) figure of merit compared to standard Schottky‐gate and metal‐insulator‐semiconductor (MIS) HEMTs. The etched gate dielectric MISHEMT demonstrated a maximum
f
t
·L
G
of 15.0 GHz·µm for an
L
G
of 100 nm.</abstract><doi>10.1049/ell2.13272</doi><orcidid>https://orcid.org/0000-0001-9918-5700</orcidid></addata></record> |
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| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2024-07, Vol.60 (13) |
| issn | 0013-5194 1350-911X |
| language | eng |
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| source | Wiley Online Library Open Access; DOAJ Directory of Open Access Journals; Wiley Online Library Journals Frontfile Complete; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| title | N‐polar deep‐recess GaN MISHEMT with enhanced f t ·L G by gate dielectric thinning |
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