S‐parameter extraction for electromagnetic modelling of memristor‐based crossbar array circuits
This article presents an efficient S‐parameter extraction method for memristor‐based crossbar array circuits. The proposed approach involves converting the array into an equivalent circuit and analytically solving the circuit to obtain the S‐parameters. Memristor‐based crossbar array circuit simulat...
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| Veröffentlicht in: | Electronics letters 2024-01, Vol.60 (2), p.n/a |
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| container_title | Electronics letters |
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| creator | Yu, Junwei Ma, Hanzhi Tao, Tuomin Zhang, Ling Li, Da Li, Er‐Ping |
| description | This article presents an efficient S‐parameter extraction method for memristor‐based crossbar array circuits. The proposed approach involves converting the array into an equivalent circuit and analytically solving the circuit to obtain the S‐parameters. Memristor‐based crossbar array circuit simulations and corresponding experimental measurements are conducted to verify the high accuracy and low computation complexity of the established method. These numerical results indicate that the authors’ S‐parameter extraction method has the potential for evaluating signal integrity performance in neuromorphic chips, thus aiding their design and optimization for diverse applications.
This article presents an efficient S‐parameter extraction method for memristor‐based crossbar array circuits. Memristor‐based crossbar array circuit simulations and corresponding experimental measurements are conducted to verify the high accuracy and low computation complexity of the established method. These numerical results indicate that the authors’ S‐parameter extraction method has the potential for evaluating signal integrity performance in neuromorphic chips, thus aiding their design and optimization for diverse applications. |
| doi_str_mv | 10.1049/ell2.13089 |
| format | Article |
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This article presents an efficient S‐parameter extraction method for memristor‐based crossbar array circuits. Memristor‐based crossbar array circuit simulations and corresponding experimental measurements are conducted to verify the high accuracy and low computation complexity of the established method. These numerical results indicate that the authors’ S‐parameter extraction method has the potential for evaluating signal integrity performance in neuromorphic chips, thus aiding their design and optimization for diverse applications.</description><identifier>ISSN: 0013-5194</identifier><identifier>EISSN: 1350-911X</identifier><identifier>DOI: 10.1049/ell2.13089</identifier><language>eng</language><subject>electromagnetic compatibility ; memristor circuits</subject><ispartof>Electronics letters, 2024-01, Vol.60 (2), p.n/a</ispartof><rights>2024 The Authors. published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2689-a3e65b5a2356e5b7e82412a48c33a76c46b1941528a5d519331b52f088e928533</cites><orcidid>0000-0001-7914-9323</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1049%2Fell2.13089$$EPDF$$P50$$Gwiley$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1049%2Fell2.13089$$EHTML$$P50$$Gwiley$$Hfree_for_read</linktohtml><link.rule.ids>314,777,781,861,1412,11543,27905,27906,45555,45556,46033,46457</link.rule.ids></links><search><creatorcontrib>Yu, Junwei</creatorcontrib><creatorcontrib>Ma, Hanzhi</creatorcontrib><creatorcontrib>Tao, Tuomin</creatorcontrib><creatorcontrib>Zhang, Ling</creatorcontrib><creatorcontrib>Li, Da</creatorcontrib><creatorcontrib>Li, Er‐Ping</creatorcontrib><title>S‐parameter extraction for electromagnetic modelling of memristor‐based crossbar array circuits</title><title>Electronics letters</title><description>This article presents an efficient S‐parameter extraction method for memristor‐based crossbar array circuits. The proposed approach involves converting the array into an equivalent circuit and analytically solving the circuit to obtain the S‐parameters. Memristor‐based crossbar array circuit simulations and corresponding experimental measurements are conducted to verify the high accuracy and low computation complexity of the established method. These numerical results indicate that the authors’ S‐parameter extraction method has the potential for evaluating signal integrity performance in neuromorphic chips, thus aiding their design and optimization for diverse applications.
This article presents an efficient S‐parameter extraction method for memristor‐based crossbar array circuits. Memristor‐based crossbar array circuit simulations and corresponding experimental measurements are conducted to verify the high accuracy and low computation complexity of the established method. These numerical results indicate that the authors’ S‐parameter extraction method has the potential for evaluating signal integrity performance in neuromorphic chips, thus aiding their design and optimization for diverse applications.</description><subject>electromagnetic compatibility</subject><subject>memristor circuits</subject><issn>0013-5194</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>24P</sourceid><sourceid>WIN</sourceid><recordid>eNp9kM1KAzEUhYMoWKsbnyBrYWp-JtNkKaX-wIALFdwNd9I7JTLTlCSi3fkIPqNPYtpx7epy4Nxzz_0IueRsxllprrHvxYxLps0RmXCpWGE4fz0mE8a4LBQ35Sk5i_EtS2HMfELs08_X9xYCDJgwUPxMAWxyfkM7n2WPNgU_wHqDyVk6-FW-4DZr6js64BBcTD7khBYirqgNPsYWAoUQYEetC_bdpXhOTjroI178zSl5uV0-L-6L-vHuYXFTF1ZU2hQgsVKtAiFVhaqdoxYlF1BqKyXMK1tWbe7PldCgVvkVKXmrRMe0RiO0knJKrsbcQ4-AXbMNboCwazhr9niaPZ7mgCeb-Wj-cD3u_nE2y7oW484vB11qoQ</recordid><startdate>202401</startdate><enddate>202401</enddate><creator>Yu, Junwei</creator><creator>Ma, Hanzhi</creator><creator>Tao, Tuomin</creator><creator>Zhang, Ling</creator><creator>Li, Da</creator><creator>Li, Er‐Ping</creator><scope>24P</scope><scope>WIN</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-7914-9323</orcidid></search><sort><creationdate>202401</creationdate><title>S‐parameter extraction for electromagnetic modelling of memristor‐based crossbar array circuits</title><author>Yu, Junwei ; Ma, Hanzhi ; Tao, Tuomin ; Zhang, Ling ; Li, Da ; Li, Er‐Ping</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2689-a3e65b5a2356e5b7e82412a48c33a76c46b1941528a5d519331b52f088e928533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>electromagnetic compatibility</topic><topic>memristor circuits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yu, Junwei</creatorcontrib><creatorcontrib>Ma, Hanzhi</creatorcontrib><creatorcontrib>Tao, Tuomin</creatorcontrib><creatorcontrib>Zhang, Ling</creatorcontrib><creatorcontrib>Li, Da</creatorcontrib><creatorcontrib>Li, Er‐Ping</creatorcontrib><collection>Wiley Online Library Open Access</collection><collection>Wiley Online Library Free Content</collection><collection>CrossRef</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yu, Junwei</au><au>Ma, Hanzhi</au><au>Tao, Tuomin</au><au>Zhang, Ling</au><au>Li, Da</au><au>Li, Er‐Ping</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>S‐parameter extraction for electromagnetic modelling of memristor‐based crossbar array circuits</atitle><jtitle>Electronics letters</jtitle><date>2024-01</date><risdate>2024</risdate><volume>60</volume><issue>2</issue><epage>n/a</epage><issn>0013-5194</issn><eissn>1350-911X</eissn><abstract>This article presents an efficient S‐parameter extraction method for memristor‐based crossbar array circuits. The proposed approach involves converting the array into an equivalent circuit and analytically solving the circuit to obtain the S‐parameters. Memristor‐based crossbar array circuit simulations and corresponding experimental measurements are conducted to verify the high accuracy and low computation complexity of the established method. These numerical results indicate that the authors’ S‐parameter extraction method has the potential for evaluating signal integrity performance in neuromorphic chips, thus aiding their design and optimization for diverse applications.
This article presents an efficient S‐parameter extraction method for memristor‐based crossbar array circuits. Memristor‐based crossbar array circuit simulations and corresponding experimental measurements are conducted to verify the high accuracy and low computation complexity of the established method. These numerical results indicate that the authors’ S‐parameter extraction method has the potential for evaluating signal integrity performance in neuromorphic chips, thus aiding their design and optimization for diverse applications.</abstract><doi>10.1049/ell2.13089</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0001-7914-9323</orcidid><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| source | DOAJ Directory of Open Access Journals; Wiley Online Library Journals Frontfile Complete; Wiley Online Library Open Access; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection |
| subjects | electromagnetic compatibility memristor circuits |
| title | S‐parameter extraction for electromagnetic modelling of memristor‐based crossbar array circuits |
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