Optimized recess etching criteria for T‐gate fabrication achieving f t = 290 GHz at L g = 124 nm in metamorphic high electron mobility transistor with In 0.7 Ga 0.3 As channel

The authors propose criteria for recess etching to fabricate T‐gate used in InGaAs high electron mobility transistors (HEMTs). By patterning additional rectangular pads on the source and drain metals in the e‐beam lithography step, it is possible to measure the drain‐to‐source resistance ( R ds ) an...

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Veröffentlicht in:	Electronics letters 2023-07, Vol.59 (14)
Hauptverfasser:	Park, Jong Yul, Min, Byoung‐Gue, Lee, Jong‐Min, Chang, Woojin, Kang, Dong Min, Jang, E‐San, Kim, Junhyung, Kim, Jeong‐Gil
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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