Electrical predictive model of Zener diode under pulsed EOS
Electrical overstress (EOS) is assumed as one of the most misinterpreted electrical phenomena that can affect drastically the reliability of electronic components. To predict the behaviour of a circuit under EOS, a relevant predictive circuit model is required. An investigation of circuit degradatio...
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| Veröffentlicht in: | Electronics letters 2015-02, Vol.51 (4), p.327-328 |
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| creator | Zhu, F Ravelo, B Fouquet, F Kadi, M |
| description | Electrical overstress (EOS) is assumed as one of the most misinterpreted electrical phenomena that can affect drastically the reliability of electronic components. To predict the behaviour of a circuit under EOS, a relevant predictive circuit model is required. An investigation of circuit degradation caused by the pulsed EOS is addressed. More precisely, the electrical response of the Zener diode BZX84B6V8 under square wave EOS is modelled. The proposed model is originally extracted from the diode electro-thermal behaviour caused by the self-heating induced by excessive EOS on the reverse voltage. The diode EOS model was emulated and implemented in VHDL-AMS language. It has been found experimentally, with a 17 V amplitude and 8 ms period square wave EOS, that the diode transient electrical parameters enable experimental response prediction. The suggested model can be used for reliability analyses of electronic devices. |
| doi_str_mv | 10.1049/el.2014.4311 |
| format | Article |
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To predict the behaviour of a circuit under EOS, a relevant predictive circuit model is required. An investigation of circuit degradation caused by the pulsed EOS is addressed. More precisely, the electrical response of the Zener diode BZX84B6V8 under square wave EOS is modelled. The proposed model is originally extracted from the diode electro-thermal behaviour caused by the self-heating induced by excessive EOS on the reverse voltage. The diode EOS model was emulated and implemented in VHDL-AMS language. It has been found experimentally, with a 17 V amplitude and 8 ms period square wave EOS, that the diode transient electrical parameters enable experimental response prediction. The suggested model can be used for reliability analyses of electronic devices.</description><identifier>ISSN: 0013-5194</identifier><identifier>ISSN: 1350-911X</identifier><identifier>EISSN: 1350-911X</identifier><identifier>DOI: 10.1049/el.2014.4311</identifier><language>eng</language><publisher>The Institution of Engineering and Technology</publisher><subject>Avalanche diodes ; circuit degradation ; circuit reliability ; Circuits ; Circuits and systems ; diode electrothermal behaviour ; diode transient electrical parameters ; Diodes ; electrical predictive model ; electrical response ; Electronic devices ; Electronics ; electrostatic discharge ; Engineering Sciences ; experimental response prediction ; Mathematical models ; pulsed EOS ; relevant predictive circuit model ; reliability analyses ; reverse voltage ; self‐heating ; square wave electrical overstress ; Square waves ; time 8 ms ; VHDL‐AMS language ; Voltage ; voltage 17 V ; Zener diode BZX84B6V8 ; Zener diodes</subject><ispartof>Electronics letters, 2015-02, Vol.51 (4), p.327-328</ispartof><rights>The Institution of Engineering and Technology</rights><rights>2020 The Institution of Engineering and Technology</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c3670-5ece52a394458f5619030a7c64da730050aa0a869295304c4ab72466468860ab3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1049%2Fel.2014.4311$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1049%2Fel.2014.4311$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>230,314,776,780,881,1411,11541,27901,27902,45550,45551,46027,46451</link.rule.ids><linktorsrc>$$Uhttps://onlinelibrary.wiley.com/doi/abs/10.1049%2Fel.2014.4311$$EView_record_in_Wiley-Blackwell$$FView_record_in_$$GWiley-Blackwell</linktorsrc><backlink>$$Uhttps://normandie-univ.hal.science/hal-02407347$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhu, F</creatorcontrib><creatorcontrib>Ravelo, B</creatorcontrib><creatorcontrib>Fouquet, F</creatorcontrib><creatorcontrib>Kadi, M</creatorcontrib><title>Electrical predictive model of Zener diode under pulsed EOS</title><title>Electronics letters</title><description>Electrical overstress (EOS) is assumed as one of the most misinterpreted electrical phenomena that can affect drastically the reliability of electronic components. To predict the behaviour of a circuit under EOS, a relevant predictive circuit model is required. An investigation of circuit degradation caused by the pulsed EOS is addressed. More precisely, the electrical response of the Zener diode BZX84B6V8 under square wave EOS is modelled. The proposed model is originally extracted from the diode electro-thermal behaviour caused by the self-heating induced by excessive EOS on the reverse voltage. The diode EOS model was emulated and implemented in VHDL-AMS language. It has been found experimentally, with a 17 V amplitude and 8 ms period square wave EOS, that the diode transient electrical parameters enable experimental response prediction. The suggested model can be used for reliability analyses of electronic devices.</description><subject>Avalanche diodes</subject><subject>circuit degradation</subject><subject>circuit reliability</subject><subject>Circuits</subject><subject>Circuits and systems</subject><subject>diode electrothermal behaviour</subject><subject>diode transient electrical parameters</subject><subject>Diodes</subject><subject>electrical predictive model</subject><subject>electrical response</subject><subject>Electronic devices</subject><subject>Electronics</subject><subject>electrostatic discharge</subject><subject>Engineering Sciences</subject><subject>experimental response prediction</subject><subject>Mathematical models</subject><subject>pulsed EOS</subject><subject>relevant predictive circuit model</subject><subject>reliability analyses</subject><subject>reverse voltage</subject><subject>self‐heating</subject><subject>square wave electrical overstress</subject><subject>Square waves</subject><subject>time 8 ms</subject><subject>VHDL‐AMS language</subject><subject>Voltage</subject><subject>voltage 17 V</subject><subject>Zener diode BZX84B6V8</subject><subject>Zener diodes</subject><issn>0013-5194</issn><issn>1350-911X</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp90E1r3DAQBmBRGuiy3Vt_gA85JFBvZqwP2-S0DU43YMghCZRehFYeEwXt2pXXKfn31eKSDwg5STM8MwwvY98QlgiiPCO_zADFUnDET2yGXEJaIv76zGYAyFOJpfjCFsPgNpGhUCBwxs4rT3YfnDU-6QM1zu7dIyXbriGfdG3ym3YUksbFOhl3Tfz3ox-oSarrm6_sqDWxWPx_5-zusrq9WKf19c-ri1WdWq5ySCVZkpnhpRCyaKXCEjiY3CrRmJwDSDAGTKHKrJQchBVmk2dCKaGKQoHZ8Dk7nfbeG6_74LYmPOnOOL1e1frQg0xAzkX-iNGeTLYP3Z-Rhr3eusGS92ZH3ThoLKCAXBSqiPT7RG3ohiFQ-7wbQR8i1eT1IVJ9iDRyOfG_ztPTh1ZXdZ39uISMI8S542nO0V4_dGPYxayieMX7pn05_A1795J_v7mNgw</recordid><startdate>20150219</startdate><enddate>20150219</enddate><creator>Zhu, F</creator><creator>Ravelo, B</creator><creator>Fouquet, F</creator><creator>Kadi, M</creator><general>The Institution of Engineering and Technology</general><general>IET</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope><scope>1XC</scope></search><sort><creationdate>20150219</creationdate><title>Electrical predictive model of Zener diode under pulsed EOS</title><author>Zhu, F ; Ravelo, B ; Fouquet, F ; Kadi, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3670-5ece52a394458f5619030a7c64da730050aa0a869295304c4ab72466468860ab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Avalanche diodes</topic><topic>circuit degradation</topic><topic>circuit reliability</topic><topic>Circuits</topic><topic>Circuits and systems</topic><topic>diode electrothermal behaviour</topic><topic>diode transient electrical parameters</topic><topic>Diodes</topic><topic>electrical predictive model</topic><topic>electrical response</topic><topic>Electronic devices</topic><topic>Electronics</topic><topic>electrostatic discharge</topic><topic>Engineering Sciences</topic><topic>experimental response prediction</topic><topic>Mathematical models</topic><topic>pulsed EOS</topic><topic>relevant predictive circuit model</topic><topic>reliability analyses</topic><topic>reverse voltage</topic><topic>self‐heating</topic><topic>square wave electrical overstress</topic><topic>Square waves</topic><topic>time 8 ms</topic><topic>VHDL‐AMS language</topic><topic>Voltage</topic><topic>voltage 17 V</topic><topic>Zener diode BZX84B6V8</topic><topic>Zener diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, F</creatorcontrib><creatorcontrib>Ravelo, B</creatorcontrib><creatorcontrib>Fouquet, F</creatorcontrib><creatorcontrib>Kadi, M</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhu, F</au><au>Ravelo, B</au><au>Fouquet, F</au><au>Kadi, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical predictive model of Zener diode under pulsed EOS</atitle><jtitle>Electronics letters</jtitle><date>2015-02-19</date><risdate>2015</risdate><volume>51</volume><issue>4</issue><spage>327</spage><epage>328</epage><pages>327-328</pages><issn>0013-5194</issn><issn>1350-911X</issn><eissn>1350-911X</eissn><abstract>Electrical overstress (EOS) is assumed as one of the most misinterpreted electrical phenomena that can affect drastically the reliability of electronic components. To predict the behaviour of a circuit under EOS, a relevant predictive circuit model is required. An investigation of circuit degradation caused by the pulsed EOS is addressed. More precisely, the electrical response of the Zener diode BZX84B6V8 under square wave EOS is modelled. The proposed model is originally extracted from the diode electro-thermal behaviour caused by the self-heating induced by excessive EOS on the reverse voltage. The diode EOS model was emulated and implemented in VHDL-AMS language. It has been found experimentally, with a 17 V amplitude and 8 ms period square wave EOS, that the diode transient electrical parameters enable experimental response prediction. The suggested model can be used for reliability analyses of electronic devices.</abstract><pub>The Institution of Engineering and Technology</pub><doi>10.1049/el.2014.4311</doi><tpages>2</tpages></addata></record> |
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| subjects | Avalanche diodes circuit degradation circuit reliability Circuits Circuits and systems diode electrothermal behaviour diode transient electrical parameters Diodes electrical predictive model electrical response Electronic devices Electronics electrostatic discharge Engineering Sciences experimental response prediction Mathematical models pulsed EOS relevant predictive circuit model reliability analyses reverse voltage self‐heating square wave electrical overstress Square waves time 8 ms VHDL‐AMS language Voltage voltage 17 V Zener diode BZX84B6V8 Zener diodes |
| title | Electrical predictive model of Zener diode under pulsed EOS |
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