Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements

Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements

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Veröffentlicht in:Electronics letters 2009-04, Vol.45 (8), p.426-427
Hauptverfasser: CHINI, A, ESPOSTO, M, MENEGHESSO, G, ZANONI, E
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 427
container_issue 8
container_start_page 426
container_title Electronics letters
container_volume 45
creator CHINI, A
ESPOSTO, M
MENEGHESSO, G
ZANONI, E
description
doi_str_mv 10.1049/el.2009.0533
format Article
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ispartof Electronics letters, 2009-04, Vol.45 (8), p.426-427
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1350-911X
language eng
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source Alma/SFX Local Collection
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements
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